MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

T. Tawara, I. Suemune, Tanaka Satoru

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.

Original languageEnglish
Pages (from-to)1019-1023
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: Nov 1 1999Nov 5 1999

Fingerprint

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Bragg reflectors
Refractive index
refractivity
Microcavities
vapor phase epitaxy
Excitons
penetration
Photons
excitons
reflectance
photons
room temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast. / Tawara, T.; Suemune, I.; Satoru, Tanaka.

In: Journal of Crystal Growth, Vol. 214, 01.01.2000, p. 1019-1023.

Research output: Contribution to journalConference article

@article{47d94da70dd14375902196e961234c85,
title = "MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast",
abstract = "ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93{\%} at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.",
author = "T. Tawara and I. Suemune and Tanaka Satoru",
year = "2000",
month = "1",
day = "1",
doi = "10.1016/S0022-0248(00)00259-1",
language = "English",
volume = "214",
pages = "1019--1023",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

AU - Tawara, T.

AU - Suemune, I.

AU - Satoru, Tanaka

PY - 2000/1/1

Y1 - 2000/1/1

N2 - ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.

AB - ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.

UR - http://www.scopus.com/inward/record.url?scp=0033686920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033686920&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00259-1

DO - 10.1016/S0022-0248(00)00259-1

M3 - Conference article

VL - 214

SP - 1019

EP - 1023

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -