MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

T. Tawara, I. Suemune, S. Tanaka

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.

Original languageEnglish
Pages (from-to)1019-1023
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: Nov 1 1999Nov 5 1999

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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