Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-Related Deep Levels in p-Silicon

Kenichiro Tahira, Michihiro Fudamoto, Mituru Tsuboyama, Toru Miyakawa, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Both multiexponential (ME-) and spectral (SA-) analysis of DLTS are applied to analyze transient capacitance wave forms due to deep Co-related levels in p-Si. The higher-temperature F-peak observed in conventional DLTS is clearly resolved into two closely spaced components. Moerever, it is found that one of these components has a quite different emission rate spectrum (F2) from the almost discrete one of the other component (F1). The emission rate spectrum for F2shows features of model centers with distributed activation enhergy and/or capture cross section. The analysis gives deep-level parameters in good agreement with those obtained by one of the authors (H.N.) from the dependence of transient capacitance amplitudes on the width of the injecting pulse. The results demonstrate the capability of ME- and SA-DLTS in resolving closely spaced level with much less effort.

    Original languageEnglish
    Pages (from-to)2029-2030
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume29
    Issue number10
    DOIs
    Publication statusPublished - Oct 1990

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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