N- and p-type doping of 4H-SiC by wet-chemical laser processing

K. Nishi, Akihiro Ikeda, D. Marui, Hiroshi Ikenoue, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We developed a method to dope phosphorus and aluminum into 4H-SiC by irradiating excimer laser light to 4H-SiC immersed in phosphoric acid solution or aluminum chloride solution. Phosphorus and aluminum are introduced at a concentration over 1020 /cm3 near the crystal surface. We produced a pn junction, and the pn junction shows a rectifying characteristic whose ideality factor is nearly unity.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
PublisherTrans Tech Publications Ltd
Pages645-648
Number of pages4
ISBN (Print)9783038350101
DOIs
Publication statusPublished - Jan 1 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: Sep 29 2013Oct 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

Fingerprint

Chemical lasers
chemical lasers
Aluminum
Phosphorus
phosphorus
Doping (additives)
aluminum
aluminum chlorides
Aluminum chloride
phosphoric acid
Phosphoric acid
Excimer lasers
Processing
crystal surfaces
excimer lasers
unity
chlorides
Crystals
aluminum chloride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishi, K., Ikeda, A., Marui, D., Ikenoue, H., & Asano, T. (2014). N- and p-type doping of 4H-SiC by wet-chemical laser processing. In Silicon Carbide and Related Materials 2013 (pp. 645-648). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.645

N- and p-type doping of 4H-SiC by wet-chemical laser processing. / Nishi, K.; Ikeda, Akihiro; Marui, D.; Ikenoue, Hiroshi; Asano, Tanemasa.

Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd, 2014. p. 645-648 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishi, K, Ikeda, A, Marui, D, Ikenoue, H & Asano, T 2014, N- and p-type doping of 4H-SiC by wet-chemical laser processing. in Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 645-648, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 9/29/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.645
Nishi K, Ikeda A, Marui D, Ikenoue H, Asano T. N- and p-type doping of 4H-SiC by wet-chemical laser processing. In Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd. 2014. p. 645-648. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.645
Nishi, K. ; Ikeda, Akihiro ; Marui, D. ; Ikenoue, Hiroshi ; Asano, Tanemasa. / N- and p-type doping of 4H-SiC by wet-chemical laser processing. Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd, 2014. pp. 645-648 (Materials Science Forum).
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