N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature over 448 K

Katsumi Nakamura, Shin Ichi Nishizawa, Akihiko Furukawa

Research output: Contribution to journalArticle

Abstract

In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced impact ionization at the p-n junction on the anode side and current filament in the active region. A relaxing electric field on the anode side and a moderated electric field on the cathode side prevent the above-mentioned behavior. These improvements result from controlling the carrier-plasma layer in the n-buffer layer on the cathode side. This article demonstrates the effective n-buffer technology for the power diode that achieves superior dynamic robustness and high operating temperature over 448 K.

Original languageEnglish
Article number9098162
Pages (from-to)2437-2444
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume67
Issue number6
DOIs
Publication statusPublished - Jun 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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