N -channel field-effect transistors with an organic-inorganic layered perovskite semiconductor

Toshinori Matsushima, Fabrice Mathevet, Benoît Heinrich, Shinobu Terakawa, Takashi Fujihara, Chuanjiang Qin, Atula S.D. Sandanayaka, Jean Charles Ribierre, Chihaya Adachi

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Abstract

Large electron injection barriers and electrode degradation are serious issues that need to be overcome to obtain n-channel operation in field-effect transistors with an organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 semiconductor. By employing low-work-function Al source/drain electrodes and by inserting C60 layers between the perovskite semiconductor and the Al electrodes to reduce the injection barrier and to suppress the electrode degradation, we demonstrate n-channel perovskite transistors with electron mobilities of up to 2.1 cm2/V s, the highest value ever reported in spin-coated perovskite transistors. The n-channel transport properties of these transistors are relatively stable in vacuum but are very sensitive to oxygen, which works as electron traps in perovskite and C60 layers. In addition, grazing-incidence X-ray scattering and thermally stimulated current measurements revealed that crystallite size and electron traps largely affect the n-channel transport properties.

Original languageEnglish
Article number253301
JournalApplied Physics Letters
Volume109
Issue number25
DOIs
Publication statusPublished - Dec 19 2016

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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