N-type Β- FeSi2 /intrinsic- Si/p -type Si heterojunction photodiodes for near-infrared light detection at room temperature

Mahmoud Shaban, Shota Izumi, Keita Nomoto, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    30 Citations (Scopus)

    Abstract

    n -Type Β -FeSi2 /intrinsic- Si/p -type Si heterojunctions, prepared by facing-targets direct-current sputtering, were evaluated as near-infrared photodetectors. The built-in potential was estimated to be approximately 1 V from capacitance-voltage characteristics. Diodes with a junction area of 0.03 mm2 exhibited a junction capacitance of 4.4 pF at zero bias. At room temperature, the devices exhibited responsivity of 140 mA/W and external quantum efficiency of 13% at a bias voltage of -5 V. The detectivity at zero bias was estimated to be 2.8× 109 cmHz/W at the wavelength of 1.31 μm. These results indicate their high application potential as near-infrared photodiodes integrated with Si.

    Original languageEnglish
    Article number162102
    JournalApplied Physics Letters
    Volume95
    Issue number16
    DOIs
    Publication statusPublished - Nov 2 2009

    Fingerprint

    photodiodes
    heterojunctions
    room temperature
    capacitance-voltage characteristics
    photometers
    quantum efficiency
    sputtering
    capacitance
    direct current
    diodes
    electric potential
    wavelengths

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Cite this

    N-type Β- FeSi2 /intrinsic- Si/p -type Si heterojunction photodiodes for near-infrared light detection at room temperature. / Shaban, Mahmoud; Izumi, Shota; Nomoto, Keita; Yoshitake, Tsuyoshi.

    In: Applied Physics Letters, Vol. 95, No. 16, 162102, 02.11.2009.

    Research output: Contribution to journalArticle

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