N-type nanocrystalline FeSi 2/intrinsic Si/p-type si heterojunction photodiodes fabricated by facing-target direct-current sputtering

Nathaporn Promros, Kyohei Yamashita, Chen Li, Kenji Kawai, Mahmoud Shaban, Toshihiro Okajima, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    n-Type nanocrystalline (NC) FeSi 2/intrinsic (i) Si/p-type Si heterojunctions, which were prepared by facing-target direct current sputtering, were evaluated as near-infrared photodiodes, and the effects of thin i-Si layer insertion on diode performance were studied. Their junction capacitance and reverse leakage current were clearly reduced compared with those of n-type NC-FeSi 2/p-type Si heterojunctions. The capacitance-voltage curve implied that the effects of interface states is relatively suppressed by i-Si insertion. The near-infrared light detection performance was investigated using a 1.33 μm laser in the temperature range of 77-300 K. The detectivities at 300 and 77 K were 1.9 × 10 8 and 3.0 × 10 11 cmHz 1/2W -1, respectively, at a negative bias of -5 V, which were markedly improved compared with that of p-n heterojunctions. This might be because the formation of interface states that act as trap centers for photocarriers is suppressed.

    Original languageEnglish
    Article number021301
    JournalJapanese journal of applied physics
    Volume51
    Issue number2 PART 1
    DOIs
    Publication statusPublished - Feb 2012

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'N-type nanocrystalline FeSi <sub>2</sub>/intrinsic Si/p-type si heterojunction photodiodes fabricated by facing-target direct-current sputtering'. Together they form a unique fingerprint.

    Cite this