N-type nanocrystalline FeSi 2/intrinsic Si/p-type si heterojunction photodiodes fabricated by facing-target direct-current sputtering

Nathaporn Promros, Kyohei Yamashita, Chen Li, Kenji Kawai, Mahmoud Shaban, Toshihiro Okajima, Tsuyoshi Yoshitake

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    17 Citations (Scopus)


    n-Type nanocrystalline (NC) FeSi 2/intrinsic (i) Si/p-type Si heterojunctions, which were prepared by facing-target direct current sputtering, were evaluated as near-infrared photodiodes, and the effects of thin i-Si layer insertion on diode performance were studied. Their junction capacitance and reverse leakage current were clearly reduced compared with those of n-type NC-FeSi 2/p-type Si heterojunctions. The capacitance-voltage curve implied that the effects of interface states is relatively suppressed by i-Si insertion. The near-infrared light detection performance was investigated using a 1.33 μm laser in the temperature range of 77-300 K. The detectivities at 300 and 77 K were 1.9 × 10 8 and 3.0 × 10 11 cmHz 1/2W -1, respectively, at a negative bias of -5 V, which were markedly improved compared with that of p-n heterojunctions. This might be because the formation of interface states that act as trap centers for photocarriers is suppressed.

    Original languageEnglish
    Article number021301
    JournalJapanese journal of applied physics
    Issue number2 PART 1
    Publication statusPublished - Feb 2012

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)


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