N-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes prepared at room temperature

Mahmoud Shaban, Kenji Kawai, Nathaporn Promros, Tsuyoshi Yoshitake

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    Abstract

    n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7×10 8cmHz/W which was improved to 1.5×1010cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

    Original languageEnglish
    Article number5610704
    Pages (from-to)1428-1430
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume31
    Issue number12
    DOIs
    Publication statusPublished - Dec 1 2010

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    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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