TY - JOUR
T1 - N-Type organic field-effect transistors with high electron mobilities based on thiazole-thiazolothiazole conjugated molecules
AU - Mamada, Masashi
AU - Nishida, Jun Ichi
AU - Kumaki, Daisuke
AU - Tokito, Shizuo
AU - Yamashita, Yoshiro
PY - 2007/10/30
Y1 - 2007/10/30
N2 - Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized and characterized by differential scanning calorimetry, X-ray single crystal analysis, UV-vis absorption spectroscopy, cyclic voltammetry, field-effect transistor (FET) characteristics, and X-ray diffraction. The FET characteristics of thiazole-thiazolothiazole derivatives are strongly dependent on the nitrogen positions. The derivative with a 2-(4-trifluoromethylphenyl) thiazole unit afforded a high performance FET device that showed a high electron mobility of 0.12 cm2 V-1 s-1 with a bottom contact configuration. Moreover, with a top contact configuration, high electron mobilities of 0.24-0.64 cm2 V-1 s-1 and low threshold voltages of 18-24 V depending on the surface modification were achieved. The relationship between molecular structure, molecular packing, electrical characteristics, film structure, and FET performance were investigated.
AB - Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized and characterized by differential scanning calorimetry, X-ray single crystal analysis, UV-vis absorption spectroscopy, cyclic voltammetry, field-effect transistor (FET) characteristics, and X-ray diffraction. The FET characteristics of thiazole-thiazolothiazole derivatives are strongly dependent on the nitrogen positions. The derivative with a 2-(4-trifluoromethylphenyl) thiazole unit afforded a high performance FET device that showed a high electron mobility of 0.12 cm2 V-1 s-1 with a bottom contact configuration. Moreover, with a top contact configuration, high electron mobilities of 0.24-0.64 cm2 V-1 s-1 and low threshold voltages of 18-24 V depending on the surface modification were achieved. The relationship between molecular structure, molecular packing, electrical characteristics, film structure, and FET performance were investigated.
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U2 - 10.1021/cm071505s
DO - 10.1021/cm071505s
M3 - Article
AN - SCOPUS:36048933638
SN - 0897-4756
VL - 19
SP - 5404
EP - 5409
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 22
ER -