N-Type organic field-effect transistors with high electron mobilities based on thiazole-thiazolothiazole conjugated molecules

Masashi Mamada, Jun Ichi Nishida, Daisuke Kumaki, Shizuo Tokito, Yoshiro Yamashita

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92 Citations (Scopus)

Abstract

Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized and characterized by differential scanning calorimetry, X-ray single crystal analysis, UV-vis absorption spectroscopy, cyclic voltammetry, field-effect transistor (FET) characteristics, and X-ray diffraction. The FET characteristics of thiazole-thiazolothiazole derivatives are strongly dependent on the nitrogen positions. The derivative with a 2-(4-trifluoromethylphenyl) thiazole unit afforded a high performance FET device that showed a high electron mobility of 0.12 cm2 V-1 s-1 with a bottom contact configuration. Moreover, with a top contact configuration, high electron mobilities of 0.24-0.64 cm2 V-1 s-1 and low threshold voltages of 18-24 V depending on the surface modification were achieved. The relationship between molecular structure, molecular packing, electrical characteristics, film structure, and FET performance were investigated.

Original languageEnglish
Pages (from-to)5404-5409
Number of pages6
JournalChemistry of Materials
Volume19
Issue number22
DOIs
Publication statusPublished - Oct 30 2007
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Materials Chemistry

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