Nano-artifact metrics based on random collapse of resist

Tsutomu Matsumoto, Morihisa Hoga, Yasuyuki Ohyagi, Mikio Ishikawa, Makoto Naruse, Kenta Hanaki, Ryosuke Suzuki, Daiki Sekiguchi, Naoya Tate, Motoichi Ohtsu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10â nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

Original languageEnglish
Article number6142
JournalScientific reports
Volume4
DOIs
Publication statusPublished - Aug 21 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

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    Matsumoto, T., Hoga, M., Ohyagi, Y., Ishikawa, M., Naruse, M., Hanaki, K., Suzuki, R., Sekiguchi, D., Tate, N., & Ohtsu, M. (2014). Nano-artifact metrics based on random collapse of resist. Scientific reports, 4, [6142]. https://doi.org/10.1038/srep06142