Nano-inkjet and its application to metal-induced crystallization of a-Si for poy-Si TFTs

Tanemasa Asano, Yuji Ishida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reviews electro-static inkjet and its application to location controlled growth of poly-crystalline Si grains for thin-film transistor application. The electro-static inkjet using a needle head enables us to draw dot patterns whose dimension is in the deep submicron region. Ejection of a Ni-nanoparticle solution using the head to the surface of a-Si produces single-grains at the printed sites as was demonstrated by Ni nano-imprint technology.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages149-156
Number of pages8
Volume33
Edition5
DOIs
Publication statusPublished - Dec 1 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Asano, T., & Ishida, Y. (2010). Nano-inkjet and its application to metal-induced crystallization of a-Si for poy-Si TFTs. In Thin Film Transistors 10, TFT 10 (5 ed., Vol. 33, pp. 149-156) https://doi.org/10.1149/1.3481229