High-quality Ge-on-insulator (GOI) structures are essential for integrating multi-functional devices onto the Si-platform. We develop the nano-lithography free method for single-crystalline GOI networks by combining partial Ge evaporation and rapid-melting growth techniques. This realizes chip size GOI with high Ge coverage fractions (>75), which is crisscrossed with nano-spacing (∼100 nm width). Over-epitaxy of Ge on the GOI network is also examined, which achieves single-crystalline GOI uniform-plane by covering the nano-spacing. This proves the validity of high-density GOI networks as the epitaxial template. This method will facilitate the heterogeneous integration of Ge, III-V semiconductors, and magnetic materials on the Si-platform.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)