Abstract
Conventional electronic devices have been based on semiconductor transistor technology, in which electron charge is controlled by electrical means. Since the emergence of the integrated circuit concept for semiconductor devices, device performance has significantly advanced via large-scale integration with the miniaturization of transistors. However, these devices are not energy efficient because of their substantial Joule heat generation and volatile characteristics. In addition, owing to recent development of top-down nanofabrication technology, device dimensions are close to the intrinsic physical scalability limits within a few-nanometer range. To overcome these serious obstacles, innovative materials, device structures, and operational principles have been recently demonstrated. In this chapter, future prospects of next-generation nanoelectronics with low power consumption are discussed with consideration of the aforementioned proposals.
| Original language | English |
|---|---|
| Title of host publication | Energy Technology Roadmaps of Japan |
| Subtitle of host publication | Future Energy Systems Based on Feasible Technologies Beyond 2030 |
| Publisher | Springer Japan |
| Pages | 507-518 |
| Number of pages | 12 |
| ISBN (Electronic) | 9784431559511 |
| ISBN (Print) | 9784431559498 |
| DOIs | |
| Publication status | Published - Jan 1 2016 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Social Sciences(all)
- Energy(all)
- Economics, Econometrics and Finance(all)
- Business, Management and Accounting(all)
- Chemistry(all)
- Chemical Engineering(all)
Cite this
Nanoelectronics with low power consumption. / Kimura, Takashi.
Energy Technology Roadmaps of Japan: Future Energy Systems Based on Feasible Technologies Beyond 2030. Springer Japan, 2016. p. 507-518.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Nanoelectronics with low power consumption
AU - Kimura, Takashi
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Conventional electronic devices have been based on semiconductor transistor technology, in which electron charge is controlled by electrical means. Since the emergence of the integrated circuit concept for semiconductor devices, device performance has significantly advanced via large-scale integration with the miniaturization of transistors. However, these devices are not energy efficient because of their substantial Joule heat generation and volatile characteristics. In addition, owing to recent development of top-down nanofabrication technology, device dimensions are close to the intrinsic physical scalability limits within a few-nanometer range. To overcome these serious obstacles, innovative materials, device structures, and operational principles have been recently demonstrated. In this chapter, future prospects of next-generation nanoelectronics with low power consumption are discussed with consideration of the aforementioned proposals.
AB - Conventional electronic devices have been based on semiconductor transistor technology, in which electron charge is controlled by electrical means. Since the emergence of the integrated circuit concept for semiconductor devices, device performance has significantly advanced via large-scale integration with the miniaturization of transistors. However, these devices are not energy efficient because of their substantial Joule heat generation and volatile characteristics. In addition, owing to recent development of top-down nanofabrication technology, device dimensions are close to the intrinsic physical scalability limits within a few-nanometer range. To overcome these serious obstacles, innovative materials, device structures, and operational principles have been recently demonstrated. In this chapter, future prospects of next-generation nanoelectronics with low power consumption are discussed with consideration of the aforementioned proposals.
UR - http://www.scopus.com/inward/record.url?scp=84988643087&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84988643087&partnerID=8YFLogxK
U2 - 10.1007/978-4-431-55951-1_39
DO - 10.1007/978-4-431-55951-1_39
M3 - Chapter
AN - SCOPUS:84988643087
SN - 9784431559498
SP - 507
EP - 518
BT - Energy Technology Roadmaps of Japan
PB - Springer Japan
ER -