Abstract
Grain refinement of GaAs was achieved by application of severe plastic deformation through high-pressure torsion (HPT). Ultrafine-grained structures including nanograins were produced by the HPT processing under 24 GPa. An intense photoluminescence (PL) peak in the near infrared corresponding to the band gap of GaAs disappeared after the HPT processing but subsequent annealing gave rise not only to restoration of the original band-gap-related peak but also to an additional PL peak in the visible part of the spectrum on account of quantum confinement in the nanograins.
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Philosophical Magazine Letters |
| Volume | 94 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Nov 20 2013 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
Cite this
Nanograin formation of GaAs by high-pressure torsion. / Ikoma, Yoshifumi; Ejiri, Yoshimasa; Hayano, Kazunori; Saito, Katsuhiko; Guo, Qixin; Horita, Zenji.
In: Philosophical Magazine Letters, Vol. 94, No. 1, 20.11.2013, p. 1-8.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanograin formation of GaAs by high-pressure torsion
AU - Ikoma, Yoshifumi
AU - Ejiri, Yoshimasa
AU - Hayano, Kazunori
AU - Saito, Katsuhiko
AU - Guo, Qixin
AU - Horita, Zenji
PY - 2013/11/20
Y1 - 2013/11/20
N2 - Grain refinement of GaAs was achieved by application of severe plastic deformation through high-pressure torsion (HPT). Ultrafine-grained structures including nanograins were produced by the HPT processing under 24 GPa. An intense photoluminescence (PL) peak in the near infrared corresponding to the band gap of GaAs disappeared after the HPT processing but subsequent annealing gave rise not only to restoration of the original band-gap-related peak but also to an additional PL peak in the visible part of the spectrum on account of quantum confinement in the nanograins.
AB - Grain refinement of GaAs was achieved by application of severe plastic deformation through high-pressure torsion (HPT). Ultrafine-grained structures including nanograins were produced by the HPT processing under 24 GPa. An intense photoluminescence (PL) peak in the near infrared corresponding to the band gap of GaAs disappeared after the HPT processing but subsequent annealing gave rise not only to restoration of the original band-gap-related peak but also to an additional PL peak in the visible part of the spectrum on account of quantum confinement in the nanograins.
UR - http://www.scopus.com/inward/record.url?scp=84888803632&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84888803632&partnerID=8YFLogxK
U2 - 10.1080/09500839.2013.852265
DO - 10.1080/09500839.2013.852265
M3 - Article
AN - SCOPUS:84888803632
VL - 94
SP - 1
EP - 8
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
SN - 0950-0839
IS - 1
ER -