Nanograin formation of GaAs by high-pressure torsion

Yoshifumi Ikoma, Yoshimasa Ejiri, Kazunori Hayano, Katsuhiko Saito, Qixin Guo, Zenji Horita

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Grain refinement of GaAs was achieved by application of severe plastic deformation through high-pressure torsion (HPT). Ultrafine-grained structures including nanograins were produced by the HPT processing under 24 GPa. An intense photoluminescence (PL) peak in the near infrared corresponding to the band gap of GaAs disappeared after the HPT processing but subsequent annealing gave rise not only to restoration of the original band-gap-related peak but also to an additional PL peak in the visible part of the spectrum on account of quantum confinement in the nanograins.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalPhilosophical Magazine Letters
Volume94
Issue number1
DOIs
Publication statusPublished - Nov 20 2013

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torsion
photoluminescence
restoration
plastic deformation
annealing

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Nanograin formation of GaAs by high-pressure torsion. / Ikoma, Yoshifumi; Ejiri, Yoshimasa; Hayano, Kazunori; Saito, Katsuhiko; Guo, Qixin; Horita, Zenji.

In: Philosophical Magazine Letters, Vol. 94, No. 1, 20.11.2013, p. 1-8.

Research output: Contribution to journalArticle

Ikoma, Yoshifumi ; Ejiri, Yoshimasa ; Hayano, Kazunori ; Saito, Katsuhiko ; Guo, Qixin ; Horita, Zenji. / Nanograin formation of GaAs by high-pressure torsion. In: Philosophical Magazine Letters. 2013 ; Vol. 94, No. 1. pp. 1-8.
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