Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

Original languageEnglish
Title of host publicationAdvanced Materials Science and Technology
PublisherTrans Tech Publications Ltd
Pages252-255
Number of pages4
ISBN (Print)9783037856604
DOIs
Publication statusPublished - 2013
Event8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan
Duration: Aug 1 2012Aug 4 2012

Publication series

NameMaterials Science Forum
Volume750
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
CountryJapan
CityFukuoka City
Period8/1/128/4/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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