Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

Original languageEnglish
Title of host publicationAdvanced Materials Science and Technology
Pages252-255
Number of pages4
DOIs
Publication statusPublished - Apr 10 2013
Event8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan
Duration: Aug 1 2012Aug 4 2012

Publication series

NameMaterials Science Forum
Volume750
ISSN (Print)0255-5476

Other

Other8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
CountryJapan
CityFukuoka City
Period8/1/128/4/12

Fingerprint

Nanopores
SOI (semiconductors)
Growth temperature
Chemical vapor deposition
vapor deposition
temperature dependence
pulses
Silicon
porosity
Oxides
Pore size
temperature
oxides
silicon
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikoma, Y., Nishino, Y., Anan, S., Abe, T., & Sakita, H. (2013). Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence. In Advanced Materials Science and Technology (pp. 252-255). (Materials Science Forum; Vol. 750). https://doi.org/10.4028/www.scientific.net/MSF.750.252

Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence. / Ikoma, Yoshifumi; Nishino, Yuta; Anan, Shouhei; Abe, Toshiaki; Sakita, Hirofumi.

Advanced Materials Science and Technology. 2013. p. 252-255 (Materials Science Forum; Vol. 750).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ikoma, Y, Nishino, Y, Anan, S, Abe, T & Sakita, H 2013, Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence. in Advanced Materials Science and Technology. Materials Science Forum, vol. 750, pp. 252-255, 8th International Forum on Advanced Materials Science and Technology, IFAMST 2012, Fukuoka City, Japan, 8/1/12. https://doi.org/10.4028/www.scientific.net/MSF.750.252
Ikoma Y, Nishino Y, Anan S, Abe T, Sakita H. Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence. In Advanced Materials Science and Technology. 2013. p. 252-255. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.750.252
Ikoma, Yoshifumi ; Nishino, Yuta ; Anan, Shouhei ; Abe, Toshiaki ; Sakita, Hirofumi. / Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence. Advanced Materials Science and Technology. 2013. pp. 252-255 (Materials Science Forum).
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