Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma; Yuta Nishino; Shouhei Anan; Toshiaki Abe; Hirofumi Sakita

doi:10.4028/www.scientific.net/MSF.750.252

Nanopore formation on SOI(100) by CH₃SiH₃ pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH₃SiH₃ pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

Original language	English
Title of host publication	Advanced Materials Science and Technology
Publisher	Trans Tech Publications Ltd
Pages	252-255
Number of pages	4
ISBN (Print)	9783037856604
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.750.252
Publication status	Published - 2013
Event	8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan Duration: Aug 1 2012 → Aug 4 2012

Publication series

Name	Materials Science Forum
Volume	750
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
Country/Territory	Japan
City	Fukuoka City
Period	8/1/12 → 8/4/12

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.750.252

Cite this

Ikoma, Y, Nishino, Y, Anan, S, Abe, T & Sakita, H 2013, Nanopore formation on SOI(100) by CH₃SiH₃ pulse jet CVD:SiC growth temperature dependence. in Advanced Materials Science and Technology. Materials Science Forum, vol. 750, Trans Tech Publications Ltd, pp. 252-255, 8th International Forum on Advanced Materials Science and Technology, IFAMST 2012, Fukuoka City, Japan, 8/1/12. https://doi.org/10.4028/www.scientific.net/MSF.750.252

@inproceedings{b96824faf08d4f9d80b2b3755c3a8053,

title = "Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence",

abstract = "We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.",

author = "Yoshifumi Ikoma and Yuta Nishino and Shouhei Anan and Toshiaki Abe and Hirofumi Sakita",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 ; Conference date: 01-08-2012 Through 04-08-2012",

year = "2013",

doi = "10.4028/www.scientific.net/MSF.750.252",

language = "English",

isbn = "9783037856604",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "252--255",

booktitle = "Advanced Materials Science and Technology",

}

TY - GEN

T1 - Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

AU - Ikoma, Yoshifumi

AU - Nishino, Yuta

AU - Anan, Shouhei

AU - Abe, Toshiaki

AU - Sakita, Hirofumi

PY - 2013

Y1 - 2013

N2 - We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

AB - We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

UR - http://www.scopus.com/inward/record.url?scp=84875822716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875822716&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.750.252

DO - 10.4028/www.scientific.net/MSF.750.252

M3 - Conference contribution

AN - SCOPUS:84875822716

SN - 9783037856604

T3 - Materials Science Forum

SP - 252

EP - 255

BT - Advanced Materials Science and Technology

PB - Trans Tech Publications Ltd

T2 - 8th International Forum on Advanced Materials Science and Technology, IFAMST 2012

Y2 - 1 August 2012 through 4 August 2012

ER -