Nanoscale doping of InAs via sulfur monolayers

Johnny C. Ho, Alexandra C. Ford, Yu Lun Chueh, Paul W. Leu, Onur Ergen, Kuniharu Takei, Gregory Smith, Prashant Majhi, Joseph Bennett, Ali Javey

Research output: Contribution to journalArticlepeer-review

Abstract

One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm /decade is observed without significant defect density. The n+/p + junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8× 1018 cm-3.

Original languageEnglish
Article number072108
JournalApplied Physics Letters
Volume95
Issue number7
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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