Nanoscale structural engineering via phase segregation: Au-Ge system

Yu Lun Chueh; Cosima N. Boswell; Chun Wei Yuan; Swanee J. Shin; Kuniharu Takei; Johnny C. Ho; Hyunhyub Ko; Zhiyong Fan; E. E. Haller; D. C. Chrzan; Ali Javey

doi:10.1021/nl902597m

Nanoscale structural engineering via phase segregation: Au-Ge system

Yu Lun Chueh, Cosima N. Boswell, Chun Wei Yuan, Swanee J. Shin, Kuniharu Takei, Johnny C. Ho, Hyunhyub Ko, Zhiyong Fan, E. E. Haller, D. C. Chrzan, Ali Javey

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A tunable structural engineering of nanowires based on template-assisted alloying and phase segregation processes is demonstrated. The Au-Ge system, which has a low eutectic temperature and negligible solid solubility (< 10^-3 atom %) of Au in Ge at low temperatures, is utilized. Depending on the Au concentration of the initial nanowires. final structures ranging from nearly periodic nanodlsk patterns to core/shell and fully alloyed nanowires are produced. The formation mechanisms are discussed in detail and characterized by in situ transmission electron microscopy and energy-dispersive spectrometry analyses. Electrical measurements illustrate the metallic and semiconducting characteristics of the fully alloyed and alternating Au/Ge nanodisk structures, respectively.

Original language	English
Pages (from-to)	393-397
Number of pages	5
Journal	Nano Letters
Volume	10
Issue number	2
DOIs	https://doi.org/10.1021/nl902597m
Publication status	Published - Feb 10 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl902597m

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abstract = "A tunable structural engineering of nanowires based on template-assisted alloying and phase segregation processes is demonstrated. The Au-Ge system, which has a low eutectic temperature and negligible solid solubility (< 10-3 atom %) of Au in Ge at low temperatures, is utilized. Depending on the Au concentration of the initial nanowires. final structures ranging from nearly periodic nanodlsk patterns to core/shell and fully alloyed nanowires are produced. The formation mechanisms are discussed in detail and characterized by in situ transmission electron microscopy and energy-dispersive spectrometry analyses. Electrical measurements illustrate the metallic and semiconducting characteristics of the fully alloyed and alternating Au/Ge nanodisk structures, respectively.",

author = "Chueh, {Yu Lun} and Boswell, {Cosima N.} and Yuan, {Chun Wei} and Shin, {Swanee J.} and Kuniharu Takei and Ho, {Johnny C.} and Hyunhyub Ko and Zhiyong Fan and Haller, {E. E.} and Chrzan, {D. C.} and Ali Javey",

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doi = "10.1021/nl902597m",

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T2 - Au-Ge system

AU - Chueh, Yu Lun

AU - Boswell, Cosima N.

AU - Yuan, Chun Wei

AU - Shin, Swanee J.

AU - Takei, Kuniharu

AU - Ho, Johnny C.

AU - Ko, Hyunhyub

AU - Fan, Zhiyong

AU - Haller, E. E.

AU - Chrzan, D. C.

AU - Javey, Ali

PY - 2010/2/10

Y1 - 2010/2/10

N2 - A tunable structural engineering of nanowires based on template-assisted alloying and phase segregation processes is demonstrated. The Au-Ge system, which has a low eutectic temperature and negligible solid solubility (< 10-3 atom %) of Au in Ge at low temperatures, is utilized. Depending on the Au concentration of the initial nanowires. final structures ranging from nearly periodic nanodlsk patterns to core/shell and fully alloyed nanowires are produced. The formation mechanisms are discussed in detail and characterized by in situ transmission electron microscopy and energy-dispersive spectrometry analyses. Electrical measurements illustrate the metallic and semiconducting characteristics of the fully alloyed and alternating Au/Ge nanodisk structures, respectively.

AB - A tunable structural engineering of nanowires based on template-assisted alloying and phase segregation processes is demonstrated. The Au-Ge system, which has a low eutectic temperature and negligible solid solubility (< 10-3 atom %) of Au in Ge at low temperatures, is utilized. Depending on the Au concentration of the initial nanowires. final structures ranging from nearly periodic nanodlsk patterns to core/shell and fully alloyed nanowires are produced. The formation mechanisms are discussed in detail and characterized by in situ transmission electron microscopy and energy-dispersive spectrometry analyses. Electrical measurements illustrate the metallic and semiconducting characteristics of the fully alloyed and alternating Au/Ge nanodisk structures, respectively.

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Nanoscale structural engineering via phase segregation: Au-Ge system

Abstract

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