Abstract
Research on the MgB2/Ni and MgB2/B multilayer films fabricated by an electron beam (EB) evaporation technique have been extensively carried out. The critical current density, Jc of MgB2/Ni and MgB2/B multilayer films in parallel fields has been suggested to be higher than that of monolayer MgB2 film due to introducing the artificial pinning centers of nano-sized Ni and B layers. Nanostructure characterization of the artificial pinning centers in the multilayer films were examined by transmission electron microscopy (TEM) and scanning TEM (STEM-energy dispersive X-ray spectroscopy (STEM-EDS))-EDS to understand the mechanism of flux pinning. The growth of columnar MgB2 grains along the film-thickness direction was recognized in the MgB2/Ni multilayer film, but not in the MgB2/B multilayer film. Nano-sized Ni layers were present as crystalline epitaxial layers which is interpreted that Ni atoms might be incorporated into the MgB2 lattice to form (Mg,Ni)B 2 phase. On the other hand, nano-sized B layers were amorphous layers. Crystalline (Mg,Ni)B2 layers worked more effectively than amorphous B-layers, providing higher flux-pinning force that resulted in higher Jc of the MgB2/Ni multilayer film than the MgB 2/B multilayer film.
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Physica C: Superconductivity and its applications |
| Volume | 488 |
| DOIs | |
| Publication status | Published - May 15 2013 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
Cite this
Nanostructure characterization of Ni and B layers as artificial pinning centers in multilayered MgB2/Ni and MgB2/B superconducting thin films. / Sosiati, H.; Hata, Satoshi; Doi, T.; Matsumoto, A.; Kitaguchi, H.; Nakashima, Hideharu.
In: Physica C: Superconductivity and its applications, Vol. 488, 15.05.2013, p. 1-8.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanostructure characterization of Ni and B layers as artificial pinning centers in multilayered MgB2/Ni and MgB2/B superconducting thin films
AU - Sosiati, H.
AU - Hata, Satoshi
AU - Doi, T.
AU - Matsumoto, A.
AU - Kitaguchi, H.
AU - Nakashima, Hideharu
PY - 2013/5/15
Y1 - 2013/5/15
N2 - Research on the MgB2/Ni and MgB2/B multilayer films fabricated by an electron beam (EB) evaporation technique have been extensively carried out. The critical current density, Jc of MgB2/Ni and MgB2/B multilayer films in parallel fields has been suggested to be higher than that of monolayer MgB2 film due to introducing the artificial pinning centers of nano-sized Ni and B layers. Nanostructure characterization of the artificial pinning centers in the multilayer films were examined by transmission electron microscopy (TEM) and scanning TEM (STEM-energy dispersive X-ray spectroscopy (STEM-EDS))-EDS to understand the mechanism of flux pinning. The growth of columnar MgB2 grains along the film-thickness direction was recognized in the MgB2/Ni multilayer film, but not in the MgB2/B multilayer film. Nano-sized Ni layers were present as crystalline epitaxial layers which is interpreted that Ni atoms might be incorporated into the MgB2 lattice to form (Mg,Ni)B 2 phase. On the other hand, nano-sized B layers were amorphous layers. Crystalline (Mg,Ni)B2 layers worked more effectively than amorphous B-layers, providing higher flux-pinning force that resulted in higher Jc of the MgB2/Ni multilayer film than the MgB 2/B multilayer film.
AB - Research on the MgB2/Ni and MgB2/B multilayer films fabricated by an electron beam (EB) evaporation technique have been extensively carried out. The critical current density, Jc of MgB2/Ni and MgB2/B multilayer films in parallel fields has been suggested to be higher than that of monolayer MgB2 film due to introducing the artificial pinning centers of nano-sized Ni and B layers. Nanostructure characterization of the artificial pinning centers in the multilayer films were examined by transmission electron microscopy (TEM) and scanning TEM (STEM-energy dispersive X-ray spectroscopy (STEM-EDS))-EDS to understand the mechanism of flux pinning. The growth of columnar MgB2 grains along the film-thickness direction was recognized in the MgB2/Ni multilayer film, but not in the MgB2/B multilayer film. Nano-sized Ni layers were present as crystalline epitaxial layers which is interpreted that Ni atoms might be incorporated into the MgB2 lattice to form (Mg,Ni)B 2 phase. On the other hand, nano-sized B layers were amorphous layers. Crystalline (Mg,Ni)B2 layers worked more effectively than amorphous B-layers, providing higher flux-pinning force that resulted in higher Jc of the MgB2/Ni multilayer film than the MgB 2/B multilayer film.
UR - http://www.scopus.com/inward/record.url?scp=84875066990&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875066990&partnerID=8YFLogxK
U2 - 10.1016/j.physc.2013.02.011
DO - 10.1016/j.physc.2013.02.011
M3 - Article
AN - SCOPUS:84875066990
VL - 488
SP - 1
EP - 8
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
ER -