Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes

Masaharu Shiratani, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2 under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2 and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2 and open-circuit voltage of 0.15 V.

Original languageEnglish
Title of host publicationTHERMEC 2013
EditorsB. Mishra, Mihail. Ionescu, T. Chandra
PublisherTrans Tech Publications Ltd
Pages2022-2027
Number of pages6
ISBN (Print)9783038350736
DOIs
Publication statusPublished - Jan 1 2014
Event8th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC 2013 - Las Vegas, NV, United States
Duration: Dec 2 2013Dec 6 2013

Publication series

NameMaterials Science Forum
Volume783-786
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other8th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC 2013
CountryUnited States
CityLas Vegas, NV
Period12/2/1312/6/13

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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