Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE

Kazuo Mori, Hiroshi Hatakeyama, Kiichi Hamamoto, Keiro Komatsu, Tatsuya Sasaki, Takashi Matsumoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report the first atmospheric-pressure narrow-stripe (<2 μm) selective MOVPE. The extremely large bandgap wavelength shift of 370 nm for a selectively grown InGaAsP/InGaAsP multiple quantum well (MQW) was obtained with a small mask width variation (0-30 μm). This shift was four times that obtained under growth at 75 Torr. High-quality MQWs with flat interfaces and a photoluminescence full-width-at-half-maximum of less than 40 meV (0.5 kW/cm 2 ) were obtained by optimizing growth conditions. We deduced that the essential flattening mechanism under these conditions is the formation of a (1 0 0) facet under step-flow growth mode. We fabricated 1.55 μm MQW Fabry-Perot laser diodes with a room temperature threshold current as low as 5 mA.

Original languageEnglish
Pages (from-to)466-473
Number of pages8
JournalJournal of Crystal Growth
Volume195
Issue number1-4
DOIs
Publication statusPublished - Dec 15 1998
Externally publishedYes

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Metallorganic vapor phase epitaxy
Atmospheric pressure
atmospheric pressure
Semiconductor quantum wells
quantum wells
shift
flattening
Full width at half maximum
threshold currents
Semiconductor lasers
Masks
flat surfaces
Photoluminescence
Energy gap
masks
semiconductor lasers
photoluminescence
Wavelength
room temperature
wavelengths

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE. / Mori, Kazuo; Hatakeyama, Hiroshi; Hamamoto, Kiichi; Komatsu, Keiro; Sasaki, Tatsuya; Matsumoto, Takashi.

In: Journal of Crystal Growth, Vol. 195, No. 1-4, 15.12.1998, p. 466-473.

Research output: Contribution to journalArticle

Mori, Kazuo ; Hatakeyama, Hiroshi ; Hamamoto, Kiichi ; Komatsu, Keiro ; Sasaki, Tatsuya ; Matsumoto, Takashi. / Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE. In: Journal of Crystal Growth. 1998 ; Vol. 195, No. 1-4. pp. 466-473.
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