Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE

Kazuo Mori, Hiroshi Hatakeyama, Kiichi Hamamoto, Keiro Komatsu, Tatsuya Sasaki, Takashi Matsumoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report the first atmospheric-pressure narrow-stripe (<2 μm) selective MOVPE. The extremely large bandgap wavelength shift of 370 nm for a selectively grown InGaAsP/InGaAsP multiple quantum well (MQW) was obtained with a small mask width variation (0-30 μm). This shift was four times that obtained under growth at 75 Torr. High-quality MQWs with flat interfaces and a photoluminescence full-width-at-half-maximum of less than 40 meV (0.5 kW/cm2) were obtained by optimizing growth conditions. We deduced that the essential flattening mechanism under these conditions is the formation of a (1 0 0) facet under step-flow growth mode. We fabricated 1.55 μm MQW Fabry-Perot laser diodes with a room temperature threshold current as low as 5 mA.

Original languageEnglish
Pages (from-to)466-473
Number of pages8
JournalJournal of Crystal Growth
Volume195
Issue number1-4
DOIs
Publication statusPublished - Dec 15 1998

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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