Natural and forced convection of molten silicon during Czochralski single crystal growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

Natural and/or forced convection of molten silicon during Czochralski single crystal growth was directly observed using X-ray radiography with solid tracers for various crystal and crucible rotation speeds, and temperature distribution in a crucible holder. Downflow attributed to natural convection in the center of a crucible which had been simulated by numerical calculation was scarcely observed with and without crucible rotation. Numerical simulation of the molten silicon was carried out by a packaged code of "FLUENT"; in the calculation, measured non-axisymmetric temperature distribution in a crucible holder was adopted. Unidirectional flow with and without crucible rotations can be qualitatively explained by the numerical simulation with non-axisymmetric temperature distribution in the crucible holder. The particle path attributed to natural convection near the solid-liquid interface was suppressed downward with increase in crystal rotation speed. The phenomena can be explained by a generation of forced convection beneath the rotating crystal.

Original languageEnglish
Pages (from-to)412-420
Number of pages9
JournalJournal of Crystal Growth
Volume94
Issue number2
DOIs
Publication statusPublished - Feb 1 1989
Externally publishedYes

Fingerprint

forced convection
Crucibles
Forced convection
Silicon
crucibles
Crystallization
Natural convection
Crystal growth
free convection
Molten materials
crystal growth
Single crystals
single crystals
silicon
holders
Temperature distribution
temperature distribution
Crystals
X ray radiography
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Natural and forced convection of molten silicon during Czochralski single crystal growth. / Kakimoto, Koichi; Eguchi, Minoru; Watanabe, Hisao; Hibiya, Taketoshi.

In: Journal of Crystal Growth, Vol. 94, No. 2, 01.02.1989, p. 412-420.

Research output: Contribution to journalArticle

Kakimoto, Koichi ; Eguchi, Minoru ; Watanabe, Hisao ; Hibiya, Taketoshi. / Natural and forced convection of molten silicon during Czochralski single crystal growth. In: Journal of Crystal Growth. 1989 ; Vol. 94, No. 2. pp. 412-420.
@article{eb0995e2bc624ca782f012b5e1fd2c67,
title = "Natural and forced convection of molten silicon during Czochralski single crystal growth",
abstract = "Natural and/or forced convection of molten silicon during Czochralski single crystal growth was directly observed using X-ray radiography with solid tracers for various crystal and crucible rotation speeds, and temperature distribution in a crucible holder. Downflow attributed to natural convection in the center of a crucible which had been simulated by numerical calculation was scarcely observed with and without crucible rotation. Numerical simulation of the molten silicon was carried out by a packaged code of {"}FLUENT{"}; in the calculation, measured non-axisymmetric temperature distribution in a crucible holder was adopted. Unidirectional flow with and without crucible rotations can be qualitatively explained by the numerical simulation with non-axisymmetric temperature distribution in the crucible holder. The particle path attributed to natural convection near the solid-liquid interface was suppressed downward with increase in crystal rotation speed. The phenomena can be explained by a generation of forced convection beneath the rotating crystal.",
author = "Koichi Kakimoto and Minoru Eguchi and Hisao Watanabe and Taketoshi Hibiya",
year = "1989",
month = "2",
day = "1",
doi = "10.1016/0022-0248(89)90016-X",
language = "English",
volume = "94",
pages = "412--420",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Natural and forced convection of molten silicon during Czochralski single crystal growth

AU - Kakimoto, Koichi

AU - Eguchi, Minoru

AU - Watanabe, Hisao

AU - Hibiya, Taketoshi

PY - 1989/2/1

Y1 - 1989/2/1

N2 - Natural and/or forced convection of molten silicon during Czochralski single crystal growth was directly observed using X-ray radiography with solid tracers for various crystal and crucible rotation speeds, and temperature distribution in a crucible holder. Downflow attributed to natural convection in the center of a crucible which had been simulated by numerical calculation was scarcely observed with and without crucible rotation. Numerical simulation of the molten silicon was carried out by a packaged code of "FLUENT"; in the calculation, measured non-axisymmetric temperature distribution in a crucible holder was adopted. Unidirectional flow with and without crucible rotations can be qualitatively explained by the numerical simulation with non-axisymmetric temperature distribution in the crucible holder. The particle path attributed to natural convection near the solid-liquid interface was suppressed downward with increase in crystal rotation speed. The phenomena can be explained by a generation of forced convection beneath the rotating crystal.

AB - Natural and/or forced convection of molten silicon during Czochralski single crystal growth was directly observed using X-ray radiography with solid tracers for various crystal and crucible rotation speeds, and temperature distribution in a crucible holder. Downflow attributed to natural convection in the center of a crucible which had been simulated by numerical calculation was scarcely observed with and without crucible rotation. Numerical simulation of the molten silicon was carried out by a packaged code of "FLUENT"; in the calculation, measured non-axisymmetric temperature distribution in a crucible holder was adopted. Unidirectional flow with and without crucible rotations can be qualitatively explained by the numerical simulation with non-axisymmetric temperature distribution in the crucible holder. The particle path attributed to natural convection near the solid-liquid interface was suppressed downward with increase in crystal rotation speed. The phenomena can be explained by a generation of forced convection beneath the rotating crystal.

UR - http://www.scopus.com/inward/record.url?scp=0024960070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024960070&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(89)90016-X

DO - 10.1016/0022-0248(89)90016-X

M3 - Article

AN - SCOPUS:0024960070

VL - 94

SP - 412

EP - 420

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -