Natural nanostructures in ionic semiconductors

Toshio Kamiya, Hiromichi Ohta, Hidenori Hiramatsu, Katsuro Hayashi, Kenji Nomura, Satoru Matsuishi, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

Nanostructures naturally formed in oxide semiconductor crystals are discussed in relation to their electronic structure and properties. Three different crystals are studied: (i) layered oxychalcogenides LnCuOCh (Ln = lanthanide, Ch = chalcogen), (ii) homologous series layered oxides RMO 3(ZnO)m (R = In, Lu etc., M = In, Ga etc., m = integer), and (iii) nanoporous crystal 12CaO7 · Al2O3 (C12A7). Coexistence of moderately large mobility, intense photoluminescence arising from room-temperature exciton and high-density hole is explained by a natural modulation doping structure in LnCuOCh. C12A7 exhibits different properties by replacing free O2- ions anions clathrated in its subnanometer-sized cages with O-, H-, and electron. The electronic structures of the clathrated anions were investigated by ab initio calculations and discussed in terms of possible quantum structures and applications.

Original languageEnglish
Pages (from-to)620-626
Number of pages7
JournalMicroelectronic Engineering
Volume73-74
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes
EventMicro and Nano Engineering 2003 - Cambridge, United Kingdom
Duration: Sep 22 2003Sep 25 2003

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Nanostructures
Semiconductor materials
Crystals
crystals
Electronic structure
Anions
Chalcogens
Negative ions
modulation doping
electronic structure
anions
Lanthanoid Series Elements
oxides
Rare earth elements
Excitons
Electronic properties
Oxides
integers
Photoluminescence
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Kamiya, T., Ohta, H., Hiramatsu, H., Hayashi, K., Nomura, K., Matsuishi, S., ... Hosono, H. (2004). Natural nanostructures in ionic semiconductors. Microelectronic Engineering, 73-74, 620-626. https://doi.org/10.1016/S0167-9317(04)00171-6

Natural nanostructures in ionic semiconductors. / Kamiya, Toshio; Ohta, Hiromichi; Hiramatsu, Hidenori; Hayashi, Katsuro; Nomura, Kenji; Matsuishi, Satoru; Ueda, Kazushige; Hirano, Masahiro; Hosono, Hideo.

In: Microelectronic Engineering, Vol. 73-74, 01.01.2004, p. 620-626.

Research output: Contribution to journalConference article

Kamiya, T, Ohta, H, Hiramatsu, H, Hayashi, K, Nomura, K, Matsuishi, S, Ueda, K, Hirano, M & Hosono, H 2004, 'Natural nanostructures in ionic semiconductors', Microelectronic Engineering, vol. 73-74, pp. 620-626. https://doi.org/10.1016/S0167-9317(04)00171-6
Kamiya T, Ohta H, Hiramatsu H, Hayashi K, Nomura K, Matsuishi S et al. Natural nanostructures in ionic semiconductors. Microelectronic Engineering. 2004 Jan 1;73-74:620-626. https://doi.org/10.1016/S0167-9317(04)00171-6
Kamiya, Toshio ; Ohta, Hiromichi ; Hiramatsu, Hidenori ; Hayashi, Katsuro ; Nomura, Kenji ; Matsuishi, Satoru ; Ueda, Kazushige ; Hirano, Masahiro ; Hosono, Hideo. / Natural nanostructures in ionic semiconductors. In: Microelectronic Engineering. 2004 ; Vol. 73-74. pp. 620-626.
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