Abstract
We have successfully fabricated Nb-based superconducting tunnel junctions (STJs) with β-Ta trapping layers. In an Nb/β-Ta stacked structure, β-Ta film showed the thickness dependence of critical temperature T c in current-voltage (I-V) characteristics due to the proximity effect from Nb films. We fabricated Nb-based STJs with β-Ta trapping layers for X-ray detector working at 0.4 K. We obtained an energy resolution of 52 eV for 5.9 keV X-ray irradiation at 0.4 K. We expect a high energy resolution by optimizing the thickness of β-Ta trapping layers and improving the fabrication process.
| Original language | English |
|---|---|
| Pages (from-to) | 1136-1138 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 13 |
| Issue number | 2 I |
| Publication status | Published - Jun 2003 |
| Event | 2002 Applied Superconductivity Conference - Houston, TX, United States Duration: Aug 4 2002 → Aug 9 2002 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering