TY - JOUR
T1 - Nb-doped SrTiO3-based high-temperature Schottky solar cells
AU - Horikiri, Fumimasa
AU - Ichikawa, Tomoyuki
AU - Han, Li Qun
AU - Kaimai, Atsushi
AU - Yashiro, Keiji
AU - Matsumoto, Hiroshige
AU - Kawada, Tatsuya
AU - Mizusaki, Junichiro
PY - 2005/11/9
Y1 - 2005/11/9
N2 - The high-temperature characteristics of donor-doped SrTiO 3/indium tin oxide (ITO) Schottky solar cells were investigated by current-voltage and impedance analyses at various oxygen partial pressures (PO2) (1-10-4 bar) at 873 K. Both current-voltage and impedance characteristics showed a reversible oxygen partial pressure dependence. The junctions demonstrated the photovoltaic effect even at high temperatures, which means the nonohmic behavior of the heterojunction remains even at high temperatures. The highest open circuit voltage and short circuit current density were 123 mV and 1.37 mA cm-2, respectively, at 1 bar O2 under 261 mW cm-2 UV irradiation. Incident photon-to-current conversion efficiency and energy conversion efficiency improved as PO2 increased. The influence of oxygen partial pressure on the solar cell characteristics is discussed.
AB - The high-temperature characteristics of donor-doped SrTiO 3/indium tin oxide (ITO) Schottky solar cells were investigated by current-voltage and impedance analyses at various oxygen partial pressures (PO2) (1-10-4 bar) at 873 K. Both current-voltage and impedance characteristics showed a reversible oxygen partial pressure dependence. The junctions demonstrated the photovoltaic effect even at high temperatures, which means the nonohmic behavior of the heterojunction remains even at high temperatures. The highest open circuit voltage and short circuit current density were 123 mV and 1.37 mA cm-2, respectively, at 1 bar O2 under 261 mW cm-2 UV irradiation. Incident photon-to-current conversion efficiency and energy conversion efficiency improved as PO2 increased. The influence of oxygen partial pressure on the solar cell characteristics is discussed.
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U2 - 10.1143/JJAP.44.8023
DO - 10.1143/JJAP.44.8023
M3 - Article
AN - SCOPUS:31644442751
SN - 0021-4922
VL - 44
SP - 8023
EP - 8026
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 11
ER -
