TY - JOUR
T1 - Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter
AU - Ye, Hao
AU - Kim, Dae Hyeon
AU - Chen, Xiankai
AU - Sandanayaka, Atula S.D.
AU - Kim, Jong Uk
AU - Zaborova, Elena
AU - Canard, Gabriel
AU - Tsuchiya, Youichi
AU - Choi, Eun Young
AU - Wu, Jeong Weon
AU - Fages, Frédéric
AU - Bredas, Jean Luc
AU - D'Aléo, Anthony
AU - Ribierre, Jean Charles Maurice
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported in part by JST ERATO Grant JPMJER1305, Japan. This work was carried out in the framework of CNRSUMI2002 2B-FUEL “Building Blocks for Future Electronics Laboratory” and was supported in part by funding of the Ministry of Science, ICT & Future Planning, Korea (2014M3A6B3063706, 2017R1E1A1A01075394). The work at Georgia Tech has been supported by a generous gift from Kyulux, Inc.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/10/9
Y1 - 2018/10/9
N2 - Near-infrared (NIR) organic light-emitting devices have aroused increasing interest because of their potential applications such as information-secured displays, photodynamic therapy, and optical telecommunication. While thermally activated delayed fluorescent (TADF) emitters have been used in a variety of high-performance organic light-emitting diodes (OLEDs) emitting in the visible spectral range, efficient NIR TADF materials have been rarely reported. Herein, we designed and synthesized a novel solution-processable NIR TADF dimeric borondifluoride curcuminoid derivative with remarkable photophysical, electroluminescence and amplified spontaneous emission properties. This dye was specifically developed to shift the emission of borondifluoride curcuminoid moiety toward longer wavelengths in the NIR region while keeping a high photoluminescence quantum yield. The most efficient OLED fabricated in this study exhibits a maximum external quantum efficiency of 5.1% for a maximum emission wavelength of 758 nm, which ranks among the highest performance for NIR electroluminescence. In addition, this NIR TADF emitter in doped thin films displays amplified spontaneous emission above 800 nm with a threshold as low as 7.5 μJ/cm2, providing evidence that this material is suitable for the realization of high-performance NIR organic semiconductor lasers.
AB - Near-infrared (NIR) organic light-emitting devices have aroused increasing interest because of their potential applications such as information-secured displays, photodynamic therapy, and optical telecommunication. While thermally activated delayed fluorescent (TADF) emitters have been used in a variety of high-performance organic light-emitting diodes (OLEDs) emitting in the visible spectral range, efficient NIR TADF materials have been rarely reported. Herein, we designed and synthesized a novel solution-processable NIR TADF dimeric borondifluoride curcuminoid derivative with remarkable photophysical, electroluminescence and amplified spontaneous emission properties. This dye was specifically developed to shift the emission of borondifluoride curcuminoid moiety toward longer wavelengths in the NIR region while keeping a high photoluminescence quantum yield. The most efficient OLED fabricated in this study exhibits a maximum external quantum efficiency of 5.1% for a maximum emission wavelength of 758 nm, which ranks among the highest performance for NIR electroluminescence. In addition, this NIR TADF emitter in doped thin films displays amplified spontaneous emission above 800 nm with a threshold as low as 7.5 μJ/cm2, providing evidence that this material is suitable for the realization of high-performance NIR organic semiconductor lasers.
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U2 - 10.1021/acs.chemmater.8b02247
DO - 10.1021/acs.chemmater.8b02247
M3 - Article
AN - SCOPUS:85054405356
SN - 0897-4756
VL - 30
SP - 6702
EP - 6710
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 19
ER -