Near-infrared light detection of n-type β-FeSi2/Intrinsic Si/p-Type Si Heterojunction Photodiodes at Low Temperatures

R. Iwasaki, K. Yamashita, N. Promros, S. Izumi, S. Funasaki, M. Shaban, T. Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    n-Type β-FeSi2/intrinsic Si/p-type Si heterojunction photodiodes were prepared by facing-targets direct-current sputtering, and their near-infrared light detection performances were evaluated in the temperature range of 50 - 300 K. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were remarkably enhanced with a decrease in the temperature. The detectivity at zero bias was estimated to be 3.8- 109 cmHz1/2/W at 300 K, and it was enhanced to be 8.9-1011 cmHz1/2/W at 50 K. It was demonstrated that β-FeSi2 is a potential material applicable to near-infrared photodetectors that are compatible with Si.

    Original languageEnglish
    Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
    Pages129-135
    Number of pages7
    Edition6
    DOIs
    Publication statusPublished - 2012
    EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
    Duration: Oct 7 2012Oct 12 2012

    Publication series

    NameECS Transactions
    Number6
    Volume50
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    OtherSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
    CountryUnited States
    CityHonolulu, HI
    Period10/7/1210/12/12

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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