TY - GEN
T1 - Near infrared photo-detector using self-assembled formation of organic crystalline nanopillar arrays
AU - Ajiki, Yoshiharu
AU - Kan, Tetsuo
AU - Yahiro, Masayuki
AU - Hamada, Akiko
AU - Adachi, Junji
AU - Adachi, Chihaya
AU - Matsumoto, Kiyoshi
AU - Shimoyama, Isao
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We proposed a near infrared photo-detector (NIR-D) using self-assembled formation of organic crystalline arrays, which were formed on an n-type silicon (n-Si) substrate and covered with an Au film. These structures act as antennas for near infrared (NIR) light, resulting in an enhancement of the light absorption on the Au film. The NIR-Ds thus have higher photo-responsivity compared with that of an Au/n-Si typed Schottky diodes, which was fabricated as a reference. In this paper, the fabrication process of the NIR-Ds and the estimation results of photo-responsivity were described. The maximum responsivity to NIR light (wavelength = 1.2 μm) was 1.79 mA/W without applying forward bias. This value is 10 times larger than the responsivity of the Au/n-Si typed Schottky diode as a reference.
AB - We proposed a near infrared photo-detector (NIR-D) using self-assembled formation of organic crystalline arrays, which were formed on an n-type silicon (n-Si) substrate and covered with an Au film. These structures act as antennas for near infrared (NIR) light, resulting in an enhancement of the light absorption on the Au film. The NIR-Ds thus have higher photo-responsivity compared with that of an Au/n-Si typed Schottky diodes, which was fabricated as a reference. In this paper, the fabrication process of the NIR-Ds and the estimation results of photo-responsivity were described. The maximum responsivity to NIR light (wavelength = 1.2 μm) was 1.79 mA/W without applying forward bias. This value is 10 times larger than the responsivity of the Au/n-Si typed Schottky diode as a reference.
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U2 - 10.1109/MEMSYS.2014.6765595
DO - 10.1109/MEMSYS.2014.6765595
M3 - Conference contribution
AN - SCOPUS:84898954936
SN - 9781479935086
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 147
EP - 150
BT - MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
Y2 - 26 January 2014 through 30 January 2014
ER -