Near-Infrared Photodetection of n-Type β-FeSi 2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

Nathaporn Promros, Kyohei Yamashita, Shota Izumi, Ryühei Iwasaki, Mahmoud Shaban, Tsuyoshi Yoshitake

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    11 Citations (Scopus)


    n-Type β-FeSi 2/intrinsic Si/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their infrared photodetection properties were studied at low temperatures. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were dramatically enhanced with a decrease in temperature. The specific detectivities at 300 and 50 K were estimated to be 3:8 × 10 9 and 8:9 × 10 11 cmHz 1/2W -1, respectively. The enhanced detectivity upon cooling is attributed to the marked reduction in the dark leakage current. The insertion of the thin intrinsic Si layer slightly contributed to the suppression of the leakage current and the detectivity improvement. It was demonstrated that β-FeSi 2 is a potential material for Si-compatible near-infrared photodetectors.

    Original languageEnglish
    Article number09MF02
    JournalJapanese journal of applied physics
    Issue number9 PART3
    Publication statusPublished - Sep 2012

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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