Near-Infrared Photodetection of n-Type β-FeSi 2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

Nathaporn Promros, Kyohei Yamashita, Shota Izumi, Ryühei Iwasaki, Mahmoud Shaban, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    n-Type β-FeSi 2/intrinsic Si/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their infrared photodetection properties were studied at low temperatures. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were dramatically enhanced with a decrease in temperature. The specific detectivities at 300 and 50 K were estimated to be 3:8 × 10 9 and 8:9 × 10 11 cmHz 1/2W -1, respectively. The enhanced detectivity upon cooling is attributed to the marked reduction in the dark leakage current. The insertion of the thin intrinsic Si layer slightly contributed to the suppression of the leakage current and the detectivity improvement. It was demonstrated that β-FeSi 2 is a potential material for Si-compatible near-infrared photodetectors.

    Original languageEnglish
    Article number09MF02
    JournalJapanese Journal of Applied Physics
    Volume51
    Issue number9 PART3
    DOIs
    Publication statusPublished - Sep 1 2012

    Fingerprint

    Leakage currents
    Heterojunctions
    heterojunctions
    Infrared radiation
    leakage
    Facings
    Bias voltage
    Photodetectors
    Photodiodes
    Photocurrents
    Temperature
    Sputtering
    rectification
    Cooling
    photodiodes
    photocurrents
    photometers
    insertion
    sputtering
    direct current

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Near-Infrared Photodetection of n-Type β-FeSi 2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures. / Promros, Nathaporn; Yamashita, Kyohei; Izumi, Shota; Iwasaki, Ryühei; Shaban, Mahmoud; Yoshitake, Tsuyoshi.

    In: Japanese Journal of Applied Physics, Vol. 51, No. 9 PART3, 09MF02, 01.09.2012.

    Research output: Contribution to journalArticle

    Promros, Nathaporn ; Yamashita, Kyohei ; Izumi, Shota ; Iwasaki, Ryühei ; Shaban, Mahmoud ; Yoshitake, Tsuyoshi. / Near-Infrared Photodetection of n-Type β-FeSi 2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 9 PART3.
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    abstract = "n-Type β-FeSi 2/intrinsic Si/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their infrared photodetection properties were studied at low temperatures. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were dramatically enhanced with a decrease in temperature. The specific detectivities at 300 and 50 K were estimated to be 3:8 × 10 9 and 8:9 × 10 11 cmHz 1/2W -1, respectively. The enhanced detectivity upon cooling is attributed to the marked reduction in the dark leakage current. The insertion of the thin intrinsic Si layer slightly contributed to the suppression of the leakage current and the detectivity improvement. It was demonstrated that β-FeSi 2 is a potential material for Si-compatible near-infrared photodetectors.",
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    AU - Izumi, Shota

    AU - Iwasaki, Ryühei

    AU - Shaban, Mahmoud

    AU - Yoshitake, Tsuyoshi

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