Near-infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO2

Takeshi Koyama, Yoshito Ito, Kazuma Yoshida, Masaharu Tsuji, Hiroki Ago, Hideo Kishida, Arao Nakamura

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    We investigate the dynamical properties of photoexcited carriers in a single monolayer of graphene at room temperature in air using femtosecond time-resolved luminescence spectroscopy. The luminescence kinetics are observed in the near-infrared region of 0.7-1.4 eV and analyzed based on the two-temperature model describing the cooling of thermalized carriers via the carrier-optical phonon interaction. The observed luminescence in the range 0.7-0.9 eV is well reproduced by the model. In the range 1.0-1.4 eV, however, the luminescence, which decays in ∼300 fs, cannot be reproduced by this model. These results indicate that the carrier system is not completely thermalized in ∼300 fs. We also show the importance of the carrier-doping effect induced by the substrate and surrounding environment in the carrier cooling dynamics and the predominance of optical phonons over acoustic phonons in the carrier-phonon interactions even at a temperature of ∼400 K.

    Original languageEnglish
    Pages (from-to)2335-2343
    Number of pages9
    JournalACS nano
    Volume7
    Issue number3
    DOIs
    Publication statusPublished - Mar 26 2013

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    Graphite
    Graphene
    Luminescence
    Monolayers
    Photoluminescence
    graphene
    Infrared radiation
    photoluminescence
    Phonons
    luminescence
    Cooling
    phonons
    Temperature
    cooling
    Acoustics
    Doping (additives)
    wireless communication
    Spectroscopy
    Kinetics
    Substrates

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Koyama, T., Ito, Y., Yoshida, K., Tsuji, M., Ago, H., Kishida, H., & Nakamura, A. (2013). Near-infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO2. ACS nano, 7(3), 2335-2343. https://doi.org/10.1021/nn305558r

    Near-infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO2. / Koyama, Takeshi; Ito, Yoshito; Yoshida, Kazuma; Tsuji, Masaharu; Ago, Hiroki; Kishida, Hideo; Nakamura, Arao.

    In: ACS nano, Vol. 7, No. 3, 26.03.2013, p. 2335-2343.

    Research output: Contribution to journalArticle

    Koyama, T, Ito, Y, Yoshida, K, Tsuji, M, Ago, H, Kishida, H & Nakamura, A 2013, 'Near-infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO2', ACS nano, vol. 7, no. 3, pp. 2335-2343. https://doi.org/10.1021/nn305558r
    Koyama, Takeshi ; Ito, Yoshito ; Yoshida, Kazuma ; Tsuji, Masaharu ; Ago, Hiroki ; Kishida, Hideo ; Nakamura, Arao. / Near-infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO2. In: ACS nano. 2013 ; Vol. 7, No. 3. pp. 2335-2343.
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    AU - Ito, Yoshito

    AU - Yoshida, Kazuma

    AU - Tsuji, Masaharu

    AU - Ago, Hiroki

    AU - Kishida, Hideo

    AU - Nakamura, Arao

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