Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes

R. Iwasaki; N. Promros; K. Yamashita; S. Izumi; S. Funasaki; M. Shaban; T. Yoshitake

doi:10.1149/05006.0157ecst

Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes

R. Iwasaki, N. Promros, K. Yamashita, S. Izumi, S. Funasaki, M. Shaban, T. Yoshitake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

n-Type β-FeSi2 thin films were epitaxially and non-epitaxially grown on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) at a substrate temperature of 600°C. Whereas the n-type epitaxial β-FeSi2/p-type Si heterojunctions exhibited a typical rectifying behavior with a rectification ratio of more than two orders of magnitude at bias voltages between ±1 V, the heterojunctions comprising non-epitaxial β-FeSi2 films rarely exhibited rectifying action. The epitaxial growth of β-FeSi2 is an significant factor for forming the heterojunction diodes.

Original language	English
Title of host publication	Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Publisher	Electrochemical Society Inc.
Pages	157-162
Number of pages	6
Edition	6
ISBN (Print)	9781607683544
DOIs	https://doi.org/10.1149/05006.0157ecst
Publication status	Published - 2013
Event	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States Duration: Oct 7 2012 → Oct 12 2012

Publication series

Name	ECS Transactions
Number	6
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/7/12 → 10/12/12

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/05006.0157ecst

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Iwasaki, R., Promros, N., Yamashita, K., Izumi, S., Funasaki, S., Shaban, M., & Yoshitake, T. (2013). Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., pp. 157-162). (ECS Transactions; Vol. 50, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/05006.0157ecst

Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. / Iwasaki, R.; Promros, N.; Yamashita, K. et al.

Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. Electrochemical Society Inc., 2013. p. 157-162 (ECS Transactions; Vol. 50, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iwasaki, R, Promros, N, Yamashita, K, Izumi, S, Funasaki, S, Shaban, M & Yoshitake, T 2013, Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. in Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 edn, ECS Transactions, no. 6, vol. 50, Electrochemical Society Inc., pp. 157-162, Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05006.0157ecst

Iwasaki R, Promros N, Yamashita K, Izumi S, Funasaki S, Shaban M et al. Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 ed. Electrochemical Society Inc. 2013. p. 157-162. (ECS Transactions; 6). doi: 10.1149/05006.0157ecst

Iwasaki, R. ; Promros, N. ; Yamashita, K. et al. / Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. Electrochemical Society Inc., 2013. pp. 157-162 (ECS Transactions; 6).

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abstract = "n-Type β-FeSi2 thin films were epitaxially and non-epitaxially grown on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) at a substrate temperature of 600°C. Whereas the n-type epitaxial β-FeSi2/p-type Si heterojunctions exhibited a typical rectifying behavior with a rectification ratio of more than two orders of magnitude at bias voltages between ±1 V, the heterojunctions comprising non-epitaxial β-FeSi2 films rarely exhibited rectifying action. The epitaxial growth of β-FeSi2 is an significant factor for forming the heterojunction diodes.",

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Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes

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