Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes

R. Iwasaki, N. Promros, K. Yamashita, S. Izumi, S. Funasaki, M. Shaban, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    n-Type β-FeSi2 thin films were epitaxially and non-epitaxially grown on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) at a substrate temperature of 600°C. Whereas the n-type epitaxial β-FeSi2/p-type Si heterojunctions exhibited a typical rectifying behavior with a rectification ratio of more than two orders of magnitude at bias voltages between ±1 V, the heterojunctions comprising non-epitaxial β-FeSi2 films rarely exhibited rectifying action. The epitaxial growth of β-FeSi2 is an significant factor for forming the heterojunction diodes.

    Original languageEnglish
    Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
    Pages157-162
    Number of pages6
    Volume50
    Edition6
    DOIs
    Publication statusPublished - 2012
    EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
    Duration: Oct 7 2012Oct 12 2012

    Other

    OtherSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
    CountryUnited States
    CityHonolulu, HI
    Period10/7/1210/12/12

    Fingerprint

    Photodiodes
    Epitaxial growth
    Heterojunctions
    Thin films
    Facings
    Substrates
    Bias voltage
    Sputtering
    Diodes
    Temperature

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Iwasaki, R., Promros, N., Yamashita, K., Izumi, S., Funasaki, S., Shaban, M., & Yoshitake, T. (2012). Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., Vol. 50, pp. 157-162) https://doi.org/10.1149/05006.0157ecst

    Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. / Iwasaki, R.; Promros, N.; Yamashita, K.; Izumi, S.; Funasaki, S.; Shaban, M.; Yoshitake, Tsuyoshi.

    Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. Vol. 50 6. ed. 2012. p. 157-162.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Iwasaki, R, Promros, N, Yamashita, K, Izumi, S, Funasaki, S, Shaban, M & Yoshitake, T 2012, Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. in Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 edn, vol. 50, pp. 157-162, Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05006.0157ecst
    Iwasaki R, Promros N, Yamashita K, Izumi S, Funasaki S, Shaban M et al. Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 ed. Vol. 50. 2012. p. 157-162 https://doi.org/10.1149/05006.0157ecst
    Iwasaki, R. ; Promros, N. ; Yamashita, K. ; Izumi, S. ; Funasaki, S. ; Shaban, M. ; Yoshitake, Tsuyoshi. / Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes. Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. Vol. 50 6. ed. 2012. pp. 157-162
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    AU - Promros, N.

    AU - Yamashita, K.

    AU - Izumi, S.

    AU - Funasaki, S.

    AU - Shaban, M.

    AU - Yoshitake, Tsuyoshi

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