Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Keita Nakano, Hayato Takeshita, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

Original languageEnglish
Title of host publication2019 IEEE International Reliability Physics Symposium, IRPS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538695043
DOIs
Publication statusPublished - May 22 2019
Event2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States
Duration: Mar 31 2019Apr 4 2019

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2019-March
ISSN (Print)1541-7026

Conference

Conference2019 IEEE International Reliability Physics Symposium, IRPS 2019
CountryUnited States
CityMonterey
Period3/31/194/4/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Liao, W., Hashimoto, M., Manabe, S., Watanabe, Y., Abe, S. I., Nakano, K., Takeshita, H., Tampo, M., Takeshita, S., & Miyake, Y. (2019). Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019 [8720568] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720568