Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs

Seiya Manabe, Yukinobu Watanabe, Wang Liao, Masanori Hashimoto, Keita Nakano, Hikaru Sato, Tadahiro Kin, Shin Ichiro Abe, Koji Hamada, Motonobu Tampo, Yasuhiro Miyake

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Abstract

We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.

Original languageEnglish
Article number8362952
Pages (from-to)1742-1749
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number8
DOIs
Publication statusPublished - Aug 2018

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Manabe, S., Watanabe, Y., Liao, W., Hashimoto, M., Nakano, K., Sato, H., Kin, T., Abe, S. I., Hamada, K., Tampo, M., & Miyake, Y. (2018). Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs. IEEE Transactions on Nuclear Science, 65(8), 1742-1749. [8362952]. https://doi.org/10.1109/TNS.2018.2839704