Negative Bias Dependence of Sulfur and Fluorine Incorporation in Diamond Films Etched by an SF6 Plasma

K. Teii, M. Hori, T. Goto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Reactive ion etching of polycryslulline diamond films has been performed in an electron cyclotron resonance SF6plasma by applying negative substrate bias (Vde). The structure and composition at the surface were examined as a function of Vde by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The SEM images revealed that the etching proceeded almost uniformly rather than preferentially over the surface, and the morphology after the etching was independent of Vde. The bulk plasmon loss features in the C Is spectra by angle-resolved XPS revealed the evolution of an amorphous layer over a diamond film surface with increasing Vde. The residual sulfur and fluorine concentrations were found to be high in the interior of the film or in the underlying diamond, ranging up to 0.6 and 1.3% for sulfur and fluorine, respectively, and rather low in the amorphous overlayer. The depth variation of their concentrations was interpreted in terms of subsurface dynamic effects based on the incorporation and displacement of atoms by penetrating energetic ions.

Original languageEnglish
Pages (from-to)G55-G58
JournalJournal of the Electrochemical Society
Volume148
Issue number2
DOIs
Publication statusPublished - Dec 1 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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