Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

Shin Ichiro Abe, Yukinobu Watanabe, Nozomi Shibano, Nobuyuki Sano, Hiroshi Furuta, Masafumi Tsutsui, Taiki Uemura, Takahiko Arakawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

Original languageEnglish
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
DOIs
Publication statusPublished - Sep 28 2012
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: Apr 15 2012Apr 19 2012

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period4/15/124/19/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Abe, S. I., Watanabe, Y., Shibano, N., Sano, N., Furuta, H., Tsutsui, M., Uemura, T., & Arakawa, T. (2012). Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 [6241928] https://doi.org/10.1109/IRPS.2012.6241928