We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.
|Title of host publication||2012 IEEE International Reliability Physics Symposium, IRPS 2012|
|Publication status||Published - Sep 28 2012|
|Event||2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States|
Duration: Apr 15 2012 → Apr 19 2012
|Other||2012 IEEE International Reliability Physics Symposium, IRPS 2012|
|Period||4/15/12 → 4/19/12|
All Science Journal Classification (ASJC) codes