New approach to formation of nanopore on SOI

SiC/Si heteroepitaxial growth by supersonic jet CVD

Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
Volume6984
DOIs
Publication statusPublished - Apr 21 2008
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: Sep 25 2007Sep 28 2007

Other

Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
CountryChina
CityShanghai
Period9/25/079/28/07

Fingerprint

Nanopores
SOI (semiconductors)
Epitaxial growth
Chemical vapor deposition
vapor deposition
Oxides
oxides
flat surfaces
Silicon
insulators
Substrates
silicon

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Ikoma, Y., Ono, K., Uenuma, M., Ogata, T., & Motooka, T. (2008). New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. In Sixth International Conference on Thin Film Physics and Applications (Vol. 6984). [69841V] https://doi.org/10.1117/12.792771

New approach to formation of nanopore on SOI : SiC/Si heteroepitaxial growth by supersonic jet CVD. / Ikoma, Yoshifumi; Ono, Kenta; Uenuma, Mutsunori; Ogata, Tomohiko; Motooka, Teruaki.

Sixth International Conference on Thin Film Physics and Applications. Vol. 6984 2008. 69841V.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ikoma, Y, Ono, K, Uenuma, M, Ogata, T & Motooka, T 2008, New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. in Sixth International Conference on Thin Film Physics and Applications. vol. 6984, 69841V, 6th International Conference on Thin Film Physics and Applications, TFPA 2007, Shanghai, China, 9/25/07. https://doi.org/10.1117/12.792771
Ikoma Y, Ono K, Uenuma M, Ogata T, Motooka T. New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. In Sixth International Conference on Thin Film Physics and Applications. Vol. 6984. 2008. 69841V https://doi.org/10.1117/12.792771
Ikoma, Yoshifumi ; Ono, Kenta ; Uenuma, Mutsunori ; Ogata, Tomohiko ; Motooka, Teruaki. / New approach to formation of nanopore on SOI : SiC/Si heteroepitaxial growth by supersonic jet CVD. Sixth International Conference on Thin Film Physics and Applications. Vol. 6984 2008.
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