New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD

Yoshifumi Ikoma; Kenta Ono; Mutsunori Uenuma; Tomohiko Ogata; Teruaki Motooka

doi:10.1117/12.792771

New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD

Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH₃SiH₃ supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

Original language	English
Title of host publication	Sixth International Conference on Thin Film Physics and Applications
Volume	6984
DOIs	https://doi.org/10.1117/12.792771
Publication status	Published - Apr 21 2008
Event	6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China Duration: Sept 25 2007 → Sept 28 2007

Other

Other	6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/Territory	China
City	Shanghai
Period	9/25/07 → 9/28/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.792771

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Ikoma, Y, Ono, K, Uenuma, M, Ogata, T & Motooka, T 2008, New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. in Sixth International Conference on Thin Film Physics and Applications. vol. 6984, 69841V, 6th International Conference on Thin Film Physics and Applications, TFPA 2007, Shanghai, China, 9/25/07. https://doi.org/10.1117/12.792771

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title = "New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD",

abstract = "We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.",

author = "Yoshifumi Ikoma and Kenta Ono and Mutsunori Uenuma and Tomohiko Ogata and Teruaki Motooka",

year = "2008",

month = apr,

day = "21",

doi = "10.1117/12.792771",

language = "English",

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T1 - New approach to formation of nanopore on SOI

T2 - 6th International Conference on Thin Film Physics and Applications, TFPA 2007

AU - Ikoma, Yoshifumi

AU - Ono, Kenta

AU - Uenuma, Mutsunori

AU - Ogata, Tomohiko

AU - Motooka, Teruaki

PY - 2008/4/21

Y1 - 2008/4/21

N2 - We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

AB - We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

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DO - 10.1117/12.792771

M3 - Conference contribution

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VL - 6984

BT - Sixth International Conference on Thin Film Physics and Applications

Y2 - 25 September 2007 through 28 September 2007

ER -

New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD

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