New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD

Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
Volume6984
DOIs
Publication statusPublished - Apr 21 2008
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: Sep 25 2007Sep 28 2007

Other

Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
CountryChina
CityShanghai
Period9/25/079/28/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD'. Together they form a unique fingerprint.

  • Cite this

    Ikoma, Y., Ono, K., Uenuma, M., Ogata, T., & Motooka, T. (2008). New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. In Sixth International Conference on Thin Film Physics and Applications (Vol. 6984). [69841V] https://doi.org/10.1117/12.792771