New crucible design for SiC single crystal growth by sublimation

Shin Ichi Nishizawa, Hirotaka Yamaguchi, Tomohisa Kato, M. Nasir Khan, Kazuo Arai, Naoki Oyanagi, Yasuo Kitou, Wook Bahng

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

Original languageEnglish
Pages (from-to)H1.5.1-H1.5.6
JournalMaterials Research Society Symposium-Proceedings
Volume640
Publication statusPublished - 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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