New crucible design for SiC single crystal growth by sublimation

Shin Ichi Nishizawa, Hirotaka Yamaguchi, Tomohisa Kato, M. Nasir Khan, Kazuo Arai, Naoki Oyanagi, Yasuo Kitou, Wook Bahng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

Original languageEnglish
Pages (from-to)H1.5.1-H1.5.6
JournalMaterials Research Society Symposium-Proceedings
Volume640
Publication statusPublished - Jan 1 2001

Fingerprint

Sublimation
Crucibles
crucibles
Crystallization
sublimation
Crystal growth
crystal growth
Single crystals
single crystals
Seed
seeds
flat surfaces
heat transfer
inclusions
Heat transfer
Crystals
cavities
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishizawa, S. I., Yamaguchi, H., Kato, T., Khan, M. N., Arai, K., Oyanagi, N., ... Bahng, W. (2001). New crucible design for SiC single crystal growth by sublimation. Materials Research Society Symposium-Proceedings, 640, H1.5.1-H1.5.6.

New crucible design for SiC single crystal growth by sublimation. / Nishizawa, Shin Ichi; Yamaguchi, Hirotaka; Kato, Tomohisa; Khan, M. Nasir; Arai, Kazuo; Oyanagi, Naoki; Kitou, Yasuo; Bahng, Wook.

In: Materials Research Society Symposium-Proceedings, Vol. 640, 01.01.2001, p. H1.5.1-H1.5.6.

Research output: Contribution to journalArticle

Nishizawa, SI, Yamaguchi, H, Kato, T, Khan, MN, Arai, K, Oyanagi, N, Kitou, Y & Bahng, W 2001, 'New crucible design for SiC single crystal growth by sublimation', Materials Research Society Symposium-Proceedings, vol. 640, pp. H1.5.1-H1.5.6.
Nishizawa SI, Yamaguchi H, Kato T, Khan MN, Arai K, Oyanagi N et al. New crucible design for SiC single crystal growth by sublimation. Materials Research Society Symposium-Proceedings. 2001 Jan 1;640:H1.5.1-H1.5.6.
Nishizawa, Shin Ichi ; Yamaguchi, Hirotaka ; Kato, Tomohisa ; Khan, M. Nasir ; Arai, Kazuo ; Oyanagi, Naoki ; Kitou, Yasuo ; Bahng, Wook. / New crucible design for SiC single crystal growth by sublimation. In: Materials Research Society Symposium-Proceedings. 2001 ; Vol. 640. pp. H1.5.1-H1.5.6.
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