TY - JOUR
T1 - New crucible design for SiC single crystal growth by sublimation
AU - Nishizawa, Shin Ichi
AU - Yamaguchi, Hirotaka
AU - Kato, Tomohisa
AU - Khan, M. Nasir
AU - Arai, Kazuo
AU - Oyanagi, Naoki
AU - Kitou, Yasuo
AU - Bahng, Wook
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2001
Y1 - 2001
N2 - SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.
AB - SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.
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M3 - Article
AN - SCOPUS:85009919353
VL - 640
SP - H1.5.1-H1.5.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -