Abstract
SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.
| Original language | English |
|---|---|
| Pages (from-to) | H1.5.1-H1.5.6 |
| Journal | Materials Research Society Symposium-Proceedings |
| Volume | 640 |
| Publication status | Published - Jan 1 2001 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
New crucible design for SiC single crystal growth by sublimation. / Nishizawa, Shin Ichi; Yamaguchi, Hirotaka; Kato, Tomohisa; Khan, M. Nasir; Arai, Kazuo; Oyanagi, Naoki; Kitou, Yasuo; Bahng, Wook.
In: Materials Research Society Symposium-Proceedings, Vol. 640, 01.01.2001, p. H1.5.1-H1.5.6.Research output: Contribution to journal › Article
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TY - JOUR
T1 - New crucible design for SiC single crystal growth by sublimation
AU - Nishizawa, Shin Ichi
AU - Yamaguchi, Hirotaka
AU - Kato, Tomohisa
AU - Khan, M. Nasir
AU - Arai, Kazuo
AU - Oyanagi, Naoki
AU - Kitou, Yasuo
AU - Bahng, Wook
PY - 2001/1/1
Y1 - 2001/1/1
N2 - SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.
AB - SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.
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UR - http://www.scopus.com/inward/citedby.url?scp=85009919353&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:85009919353
VL - 640
SP - H1.5.1-H1.5.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -