New crucible design for SiC single crystal growth by sublimation

S. Nishizawa, H. Yamaguchi, T. Kato, M. N. Khan, K. Arai, N. Oyanagi, Y. Kitou, W. Bahng

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

Original languageEnglish
Pages (from-to)H1.5.1-H1.5.6
JournalMaterials Research Society Symposium - Proceedings
Volume640
Publication statusPublished - Jan 1 2001
Externally publishedYes
EventSilicon Carbide- Materials, Processing and Devices - Boston, MA, United States
Duration: Nov 27 2000Nov 29 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Nishizawa, S., Yamaguchi, H., Kato, T., Khan, M. N., Arai, K., Oyanagi, N., Kitou, Y., & Bahng, W. (2001). New crucible design for SiC single crystal growth by sublimation. Materials Research Society Symposium - Proceedings, 640, H1.5.1-H1.5.6.