New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

M. Mukaida, Y. Takano, K. Chiba, T. Moriya, M. Kusunoki, S. Ohshima

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

Original languageEnglish
Pages (from-to)890-892
Number of pages3
JournalSuperconductor Science and Technology
Volume12
Issue number11
DOIs
Publication statusPublished - Nov 1 1999
Externally publishedYes
EventProceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA
Duration: Jun 21 1999Jun 25 1999

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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