New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

Masashi Mukaida, Y. Takano, K. Chiba, T. Moriya, M. Kusunoki, S. Ohshima

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

Original languageEnglish
Pages (from-to)890-892
Number of pages3
JournalSuperconductor Science and Technology
Volume12
Issue number11
DOIs
Publication statusPublished - Nov 1 1999
Externally publishedYes
EventProceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA
Duration: Jun 21 1999Jun 25 1999

Fingerprint

Buffer layers
buffers
Thin films
Substrates
thin films
Grain boundaries
Surface resistance
Microwave devices
Superconducting films
Dielectric resonators
Epitaxial films
Film growth
Pulsed laser deposition
grain boundaries
microwaves
Microwaves
low resistance
superconducting films
Scanning
X rays

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates. / Mukaida, Masashi; Takano, Y.; Chiba, K.; Moriya, T.; Kusunoki, M.; Ohshima, S.

In: Superconductor Science and Technology, Vol. 12, No. 11, 01.11.1999, p. 890-892.

Research output: Contribution to journalConference article

Mukaida, Masashi ; Takano, Y. ; Chiba, K. ; Moriya, T. ; Kusunoki, M. ; Ohshima, S. / New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates. In: Superconductor Science and Technology. 1999 ; Vol. 12, No. 11. pp. 890-892.
@article{a6ebce317e564ed7a63178f1baf19cf8,
title = "New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates",
abstract = "45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.",
author = "Masashi Mukaida and Y. Takano and K. Chiba and T. Moriya and M. Kusunoki and S. Ohshima",
year = "1999",
month = "11",
day = "1",
doi = "10.1088/0953-2048/12/11/359",
language = "English",
volume = "12",
pages = "890--892",
journal = "Superconductor Science and Technology",
issn = "0953-2048",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

AU - Mukaida, Masashi

AU - Takano, Y.

AU - Chiba, K.

AU - Moriya, T.

AU - Kusunoki, M.

AU - Ohshima, S.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - 45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

AB - 45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

UR - http://www.scopus.com/inward/record.url?scp=0033226231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033226231&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/12/11/359

DO - 10.1088/0953-2048/12/11/359

M3 - Conference article

AN - SCOPUS:0033226231

VL - 12

SP - 890

EP - 892

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

SN - 0953-2048

IS - 11

ER -