New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

M. Mukaida; Y. Takano; K. Chiba; T. Moriya; M. Kusunoki; S. Ohshima

doi:10.1088/0953-2048/12/11/359

New epitaxial BaSnO₃ buffer layer for YBa₂Cu₃O_7-δ thin films on MgO substrates

M. Mukaida, Y. Takano, K. Chiba, T. Moriya, M. Kusunoki, S. Ohshima

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

45° grain boundaries, which drastically increase surface resistance (R_S) in superconducting YBa₂Cu₃O_7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO₃. BaSnO₃ buffer layers and YBa₂Cu₃O_7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO₃, YBa₂Cu₃O_7-δ and MgO are confirmed by x-ray φ-scanning. The R_S values of the YBa₂Cu₃O_7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa₂Cu₃O_7-δ films grown on BaSnO₃ buffered MgO substrates show lower R_S than YBa₂Cu₃O_7-δ films directly grown on MgO substrates. The BaSnO₃ buffer layer which enables YBa₂Cu₃O_7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

Original language	English
Pages (from-to)	890-892
Number of pages	3
Journal	Superconductor Science and Technology
Volume	12
Issue number	11
DOIs	https://doi.org/10.1088/0953-2048/12/11/359
Publication status	Published - Nov 1 1999
Externally published	Yes
Event	Proceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA Duration: Jun 21 1999 → Jun 25 1999

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/12/11/359

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title = "New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates",

abstract = "45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.",

author = "M. Mukaida and Y. Takano and K. Chiba and T. Moriya and M. Kusunoki and S. Ohshima",

year = "1999",

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T1 - New epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

AU - Mukaida, M.

AU - Takano, Y.

AU - Chiba, K.

AU - Moriya, T.

AU - Kusunoki, M.

AU - Ohshima, S.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - 45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

AB - 45° grain boundaries, which drastically increase surface resistance (RS) in superconducting YBa2Cu3O7-δ films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-δ and MgO are confirmed by x-ray φ-scanning. The RS values of the YBa2Cu3O7-δ films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-δ films grown on BaSnO3 buffered MgO substrates show lower RS than YBa2Cu3O7-δ films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-δ films to grow without 45° grain boundaries at a optimum film growth condition is attractive for microwave applications.

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SN - 0953-2048

VL - 12

SP - 890

EP - 892

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

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T2 - Proceedings of the 1999 International Superconductive Electronics Conference

Y2 - 21 June 1999 through 25 June 1999

ER -

New epitaxial BaSnO₃ buffer layer for YBa₂Cu₃O_7-δ thin films on MgO substrates

Abstract

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