New insulating material for YBa2Cu3Ox/Insulator/YBa2Cu3Ox tunnel junctions

Yasuo Tazoh; Masashi Mukaida; Shitaro Miyazawa

doi:10.1016/0921-4534(94)91198-3

New insulating material for YBa₂Cu₃O_x/Insulator/YBa₂Cu₃O_x tunnel junctions

Yasuo Tazoh, Masashi Mukaida, Shitaro Miyazawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

BaSnO₃ is proposed as a new insulating material for YBCO-SIS tunnel junctions from the viewpoint of the superconducting behavior of a layer-structured YBCO. YBCO and BaSnO₃ thin films were grown in-situ by a reactive co-evaporation in oxygen radicals. XRD, AFM, and RHEED observations confirm that (001) oriented YBCO and (100) oriented BaSnO₃ thin films grow epitaxially on each other. Cross-sectional TEM observations reveal that about 4 nm thick BaSnO₃ thin films perfetly cover the lower YBCO thin film surface steps with a height of one unit cell length of YBCO. T_c of the lower and upper YBCO thin films is higher that 80 K.

Original language	English
Pages (from-to)	3343-3344
Number of pages	2
Journal	Physica C: Superconductivity and its applications
Volume	235-240
Issue number	PART 5
DOIs	https://doi.org/10.1016/0921-4534(94)91198-3
Publication status	Published - Dec 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/0921-4534(94)91198-3

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title = "New insulating material for YBa2Cu3Ox/Insulator/YBa2Cu3Ox tunnel junctions",

abstract = "BaSnO3 is proposed as a new insulating material for YBCO-SIS tunnel junctions from the viewpoint of the superconducting behavior of a layer-structured YBCO. YBCO and BaSnO3 thin films were grown in-situ by a reactive co-evaporation in oxygen radicals. XRD, AFM, and RHEED observations confirm that (001) oriented YBCO and (100) oriented BaSnO3 thin films grow epitaxially on each other. Cross-sectional TEM observations reveal that about 4 nm thick BaSnO3 thin films perfetly cover the lower YBCO thin film surface steps with a height of one unit cell length of YBCO. Tc of the lower and upper YBCO thin films is higher that 80 K.",

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doi = "10.1016/0921-4534(94)91198-3",

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T1 - New insulating material for YBa2Cu3Ox/Insulator/YBa2Cu3Ox tunnel junctions

AU - Tazoh, Yasuo

AU - Mukaida, Masashi

AU - Miyazawa, Shitaro

PY - 1994/12

Y1 - 1994/12

N2 - BaSnO3 is proposed as a new insulating material for YBCO-SIS tunnel junctions from the viewpoint of the superconducting behavior of a layer-structured YBCO. YBCO and BaSnO3 thin films were grown in-situ by a reactive co-evaporation in oxygen radicals. XRD, AFM, and RHEED observations confirm that (001) oriented YBCO and (100) oriented BaSnO3 thin films grow epitaxially on each other. Cross-sectional TEM observations reveal that about 4 nm thick BaSnO3 thin films perfetly cover the lower YBCO thin film surface steps with a height of one unit cell length of YBCO. Tc of the lower and upper YBCO thin films is higher that 80 K.

AB - BaSnO3 is proposed as a new insulating material for YBCO-SIS tunnel junctions from the viewpoint of the superconducting behavior of a layer-structured YBCO. YBCO and BaSnO3 thin films were grown in-situ by a reactive co-evaporation in oxygen radicals. XRD, AFM, and RHEED observations confirm that (001) oriented YBCO and (100) oriented BaSnO3 thin films grow epitaxially on each other. Cross-sectional TEM observations reveal that about 4 nm thick BaSnO3 thin films perfetly cover the lower YBCO thin film surface steps with a height of one unit cell length of YBCO. Tc of the lower and upper YBCO thin films is higher that 80 K.

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New insulating material for YBa₂Cu₃O_x/Insulator/YBa₂Cu₃O_x tunnel junctions

Abstract

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