TY - GEN
T1 - New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment
AU - Kakushima, K.
AU - Hoshii, T.
AU - Watanabe, M.
AU - Shizyo, N.
AU - Furukawa, K.
AU - Saraya, T.
AU - Takakura, T.
AU - Itou, K.
AU - Fukui, M.
AU - Suzuki, S.
AU - Takeuchi, K.
AU - Muneta, I.
AU - Wakabayashi, H.
AU - Numasawa, Y.
AU - Ogura, A.
AU - Nishizawa, S.
AU - Tsutsui, K.
AU - Hiramoto, T.
AU - Ohashi, H.
AU - Iwai, H.
N1 - Funding Information:
The authors would like to thank K. Sato of Mitsubishi Electric Co., T. Matsudai and W. Saito of Toshiba Electronic Devices & Storage Corp. for fruitful discussions. This work is based on results obtained from a project commissioned by New Energy and Industrial Technology Development Organization (NEDO).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/10/22
Y1 - 2018/10/22
N2 - A new methodology to evaluate the process temperature dependence of the minority carrier lifetime has been developed. A TEG layout with p+-stripes on an n-Si substrate was designed. When all the p+n junctions are made forward, the minority carrier diffusion current flows one dimensionally into the substrate. On the other hand, for making only the one center p+n junction forward, the current spreads laterally and flows cylindrically into the substrate. By the difference in the flow path of the minority carrier diffusion, we can successfully extract the minority carrier lifetime. We applied this methodology to the evaluation of the minority carrier lifetime depending on process temperatures and confirmed the lifetime degradation for high temperature process.
AB - A new methodology to evaluate the process temperature dependence of the minority carrier lifetime has been developed. A TEG layout with p+-stripes on an n-Si substrate was designed. When all the p+n junctions are made forward, the minority carrier diffusion current flows one dimensionally into the substrate. On the other hand, for making only the one center p+n junction forward, the current spreads laterally and flows cylindrically into the substrate. By the difference in the flow path of the minority carrier diffusion, we can successfully extract the minority carrier lifetime. We applied this methodology to the evaluation of the minority carrier lifetime depending on process temperatures and confirmed the lifetime degradation for high temperature process.
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U2 - 10.1109/VLSIC.2018.8502399
DO - 10.1109/VLSIC.2018.8502399
M3 - Conference contribution
AN - SCOPUS:85056870621
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - 105
EP - 106
BT - 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
Y2 - 18 June 2018 through 22 June 2018
ER -