Abstract
Defect formation by retainer ring pressure in chemical mechanical polishing (CMP) was investigated. It was found that a higher retainer ring pressure causes more defects. The mechanism underlying this finding was considered to be the agglomeration of abrasive particles mixed with polished polymers from the retainer ring. Such agglomeration is accelerated by increasing the retainer ring pressure. This ring pressure exerts stress onto particles and also polishes the polymers from the ring. Lowering the retainer ring pressure and also changing the ring material from polymers, which are easy to polish, to tough materials are effective for minimizing the density of defects in CMP.
| Original language | English |
|---|---|
| Article number | 126502 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 52 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 2013 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
New model of defect formation caused by retainer ring in chemical mechanical polishing. / Isobe, Akira; Komiyama, Takashi; Kurokawa, Syuhei.
In: Japanese Journal of Applied Physics, Vol. 52, No. 12, 126502, 12.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New model of defect formation caused by retainer ring in chemical mechanical polishing
AU - Isobe, Akira
AU - Komiyama, Takashi
AU - Kurokawa, Syuhei
PY - 2013/12
Y1 - 2013/12
N2 - Defect formation by retainer ring pressure in chemical mechanical polishing (CMP) was investigated. It was found that a higher retainer ring pressure causes more defects. The mechanism underlying this finding was considered to be the agglomeration of abrasive particles mixed with polished polymers from the retainer ring. Such agglomeration is accelerated by increasing the retainer ring pressure. This ring pressure exerts stress onto particles and also polishes the polymers from the ring. Lowering the retainer ring pressure and also changing the ring material from polymers, which are easy to polish, to tough materials are effective for minimizing the density of defects in CMP.
AB - Defect formation by retainer ring pressure in chemical mechanical polishing (CMP) was investigated. It was found that a higher retainer ring pressure causes more defects. The mechanism underlying this finding was considered to be the agglomeration of abrasive particles mixed with polished polymers from the retainer ring. Such agglomeration is accelerated by increasing the retainer ring pressure. This ring pressure exerts stress onto particles and also polishes the polymers from the ring. Lowering the retainer ring pressure and also changing the ring material from polymers, which are easy to polish, to tough materials are effective for minimizing the density of defects in CMP.
UR - http://www.scopus.com/inward/record.url?scp=84892391433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84892391433&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.126502
DO - 10.7567/JJAP.52.126502
M3 - Article
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
M1 - 126502
ER -