Abstract
This paper describes a new module structure for 40-Gbit/s class ICs. This structure can eliminate cavity resonance in the package and excitation of parasitic propagation modes in RF feedthroughs. Additionally, the design makes use of flip-chip technology to minimize the parasitic reactance that can occur at interconnections between chips and substrates. These features make module operation stable at frequencies beyond 40 GHz. We also demonstrate a DC-to-40-GHz distributed amplifier IC module that uses this new technology.
| Original language | English |
|---|---|
| Pages (from-to) | 243-246 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 1 |
| Publication status | Published - Jan 1 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA Duration: Jun 17 1996 → Jun 21 1996 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Yamaguchi, S., Imai, Y., Kimura, S., & Tsunetsugu, H. (1996). New module structure using flip-chip technology for high-speed optical communication ICs. IEEE MTT-S International Microwave Symposium Digest, 1, 243-246.