New self-aligned process for fabrication of microemitter arrays using selective etching of silicon

Tanemasa Asano, Junji Yasuda

Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

Abstract

Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10 V is demonstrated.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages6347-6695
Number of pages349
Volume35
Edition12 B
Publication statusPublished - Dec 1996
Externally publishedYes
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: Jul 8 1996Jul 11 1996

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period7/8/967/11/96

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Asano, T., & Yasuda, J. (1996). New self-aligned process for fabrication of microemitter arrays using selective etching of silicon. In Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B ed., Vol. 35, pp. 6347-6695)