New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film

Masahiro Sasaura, Masashi Mukaida, Shintaro Miyazawa

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The potential of a new substrate, PrGaO3, for high Tc oxide superconducting films is investigated and results indicate it is the most suitable material studied so far. Single crystals were grown by the Czochralski method. The lattice mismatch between PrGaO3 and YBa 2Cu3Ox superconductor was estimated to be only 0.02% at the elevated deposition temperature. The dielectric constant value was 24 at 10 kHz. The c-axis oriented YBa2Cu3Ox films were deposited onto PrGaO3 substrates by the laser ablation technique. Their superconducting transition temperature was as high as 90 K, even for a film thickness of only 500 Å.

Original languageEnglish
Pages (from-to)2728-2729
Number of pages2
JournalApplied Physics Letters
Volume57
Issue number25
DOIs
Publication statusPublished - Dec 1 1990
Externally publishedYes

Fingerprint

Czochralski method
superconducting films
laser ablation
film thickness
transition temperature
permittivity
oxides
single crystals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film. / Sasaura, Masahiro; Mukaida, Masashi; Miyazawa, Shintaro.

In: Applied Physics Letters, Vol. 57, No. 25, 01.12.1990, p. 2728-2729.

Research output: Contribution to journalArticle

Sasaura, Masahiro ; Mukaida, Masashi ; Miyazawa, Shintaro. / New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film. In: Applied Physics Letters. 1990 ; Vol. 57, No. 25. pp. 2728-2729.
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