NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE.

Tanemasa Asano, Tsuyoshi Fukada, Seijiro Furukawa, Hiroshi Ishiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

n** plus -Si has been found to be an ohmic contact to n-GaAs. The n** plus -Si films were formed on n-GaAs by conventional vacuum evaporation and P** plus ion implantation. Even after annealing at 850 degree C, the surface and the interface of the n** plus -Si/n-GaAs structure were uniform and ohmic contact characteristics were observed. By using Al as electrodes on the n** plus -Si film, the contact resistivity of about 1. 5 OMEGA multiplied by (times) mm was obtained, which was only three times higher than that of the conventional Au-Ge alloyed contact. MESFETs were fabricated and the Al/n** plus -Si contact to n-GaAs was found to be stable at least up to 500 degree C.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages67-70
Number of pages4
ISBN (Print)4930813212
Publication statusPublished - Dec 1 1987
Externally publishedYes

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Ohmic contacts
Vacuum evaporation
Ion implantation
Annealing
Electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Asano, T., Fukada, T., Furukawa, S., & Ishiwara, H. (1987). NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE. In Conference on Solid State Devices and Materials (pp. 67-70). Japan Soc of Applied Physics.

NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE. / Asano, Tanemasa; Fukada, Tsuyoshi; Furukawa, Seijiro; Ishiwara, Hiroshi.

Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 67-70.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Asano, T, Fukada, T, Furukawa, S & Ishiwara, H 1987, NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE. in Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, pp. 67-70.
Asano T, Fukada T, Furukawa S, Ishiwara H. NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE. In Conference on Solid State Devices and Materials. Japan Soc of Applied Physics. 1987. p. 67-70
Asano, Tanemasa ; Fukada, Tsuyoshi ; Furukawa, Seijiro ; Ishiwara, Hiroshi. / NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE. Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. pp. 67-70
@inproceedings{83fa4d316fe14843ae0056d3a039182b,
title = "NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE.",
abstract = "n** plus -Si has been found to be an ohmic contact to n-GaAs. The n** plus -Si films were formed on n-GaAs by conventional vacuum evaporation and P** plus ion implantation. Even after annealing at 850 degree C, the surface and the interface of the n** plus -Si/n-GaAs structure were uniform and ohmic contact characteristics were observed. By using Al as electrodes on the n** plus -Si film, the contact resistivity of about 1. 5 OMEGA multiplied by (times) mm was obtained, which was only three times higher than that of the conventional Au-Ge alloyed contact. MESFETs were fabricated and the Al/n** plus -Si contact to n-GaAs was found to be stable at least up to 500 degree C.",
author = "Tanemasa Asano and Tsuyoshi Fukada and Seijiro Furukawa and Hiroshi Ishiwara",
year = "1987",
month = "12",
day = "1",
language = "English",
isbn = "4930813212",
pages = "67--70",
booktitle = "Conference on Solid State Devices and Materials",
publisher = "Japan Soc of Applied Physics",

}

TY - GEN

T1 - NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE.

AU - Asano, Tanemasa

AU - Fukada, Tsuyoshi

AU - Furukawa, Seijiro

AU - Ishiwara, Hiroshi

PY - 1987/12/1

Y1 - 1987/12/1

N2 - n** plus -Si has been found to be an ohmic contact to n-GaAs. The n** plus -Si films were formed on n-GaAs by conventional vacuum evaporation and P** plus ion implantation. Even after annealing at 850 degree C, the surface and the interface of the n** plus -Si/n-GaAs structure were uniform and ohmic contact characteristics were observed. By using Al as electrodes on the n** plus -Si film, the contact resistivity of about 1. 5 OMEGA multiplied by (times) mm was obtained, which was only three times higher than that of the conventional Au-Ge alloyed contact. MESFETs were fabricated and the Al/n** plus -Si contact to n-GaAs was found to be stable at least up to 500 degree C.

AB - n** plus -Si has been found to be an ohmic contact to n-GaAs. The n** plus -Si films were formed on n-GaAs by conventional vacuum evaporation and P** plus ion implantation. Even after annealing at 850 degree C, the surface and the interface of the n** plus -Si/n-GaAs structure were uniform and ohmic contact characteristics were observed. By using Al as electrodes on the n** plus -Si film, the contact resistivity of about 1. 5 OMEGA multiplied by (times) mm was obtained, which was only three times higher than that of the conventional Au-Ge alloyed contact. MESFETs were fabricated and the Al/n** plus -Si contact to n-GaAs was found to be stable at least up to 500 degree C.

UR - http://www.scopus.com/inward/record.url?scp=0023538505&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023538505&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023538505

SN - 4930813212

SP - 67

EP - 70

BT - Conference on Solid State Devices and Materials

PB - Japan Soc of Applied Physics

ER -