New type TFT with unique operation and simple fabrication process

Reiji Hattori, Yukinobu Tanida, Junji Shirafuji

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

A thin film transistor (TFT) with a new structure and a unique operation principle has been proposed. This TFT has Schottky barrier contacts at source and drain, and employs electron tunneling through the Schottky barrier. The first feature of this TFT is simplification of the production process because a self-aligned technique is applicable and an ion-implantation process is not necessary. These advantages are promising for low-cost production of active-matrix liquid crystal displays (AM-LCDs). In this letter, we propose of new type TFT and carry out 2-D device simulation on a simplified structure to show the fundamental characteristics of this transistor and to optimize impurity density, channel thickness, and barrier height.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume345
Publication statusPublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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