Abstract
Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
Original language | English |
---|---|
Article number | 042111 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 4 |
DOIs | |
Publication status | Published - Aug 3 2007 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)