Abstract
Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
| Original language | English |
|---|---|
| Article number | 042111 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Aug 3 2007 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Ni-imprint induced solid-phase crystallization in Si1-xGe x (x : 0-1) on insulator. / Toko, Kaoru; Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Asano, Tanemasa; Miyao, Masanobu.
In: Applied Physics Letters, Vol. 91, No. 4, 042111, 03.08.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ni-imprint induced solid-phase crystallization in Si1-xGe x (x
T2 - 0-1) on insulator
AU - Toko, Kaoru
AU - Kanno, Hiroshi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Asano, Tanemasa
AU - Miyao, Masanobu
PY - 2007/8/3
Y1 - 2007/8/3
N2 - Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
AB - Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
UR - http://www.scopus.com/inward/record.url?scp=34547441988&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547441988&partnerID=8YFLogxK
U2 - 10.1063/1.2764447
DO - 10.1063/1.2764447
M3 - Article
AN - SCOPUS:34547441988
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
M1 - 042111
ER -