Ni-imprint induced solid-phase crystallization in Si1-xGe x (x

0-1) on insulator

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.

Original languageEnglish
Article number042111
JournalApplied Physics Letters
Volume91
Issue number4
DOIs
Publication statusPublished - Aug 3 2007

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solid phases
insulators
crystallization
crystals
nucleation
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ni-imprint induced solid-phase crystallization in Si1-xGe x (x : 0-1) on insulator. / Toko, Kaoru; Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Asano, Tanemasa; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 91, No. 4, 042111, 03.08.2007.

Research output: Contribution to journalArticle

Toko, Kaoru ; Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Asano, Tanemasa ; Miyao, Masanobu. / Ni-imprint induced solid-phase crystallization in Si1-xGe x (x : 0-1) on insulator. In: Applied Physics Letters. 2007 ; Vol. 91, No. 4.
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