TY - JOUR
T1 - Ni-imprint induced solid-phase crystallization in Si1-xGe x (x: 0-1) on insulator
AU - Toko, Kaoru
AU - Kanno, Hiroshi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Asano, Tanemasa
AU - Miyao, Masanobu
N1 - Funding Information:
The authors gratefully acknowledge Akiyoshi Baba of Kyushu Institute of Technology for his assistance of sample preparation. This work was partially supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2007
Y1 - 2007
N2 - Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
AB - Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
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U2 - 10.1063/1.2764447
DO - 10.1063/1.2764447
M3 - Article
AN - SCOPUS:34547441988
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
M1 - 042111
ER -