Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement

H. Kitagawa, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    15 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)K49-K52
    Journalphysica status solidi (a)
    Volume99
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 1987

    Fingerprint

    Deep level transient spectroscopy
    Hall effect
    Silicon
    Nickel
    Spectroscopy

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement. / Kitagawa, H.; Nakashima, Hiroshi.

    In: physica status solidi (a), Vol. 99, No. 1, 01.01.1987, p. K49-K52.

    Research output: Contribution to journalArticle

    @article{f690b4209016457cba07b9f73722f5cc,
    title = "Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement",
    author = "H. Kitagawa and Hiroshi Nakashima",
    year = "1987",
    month = "1",
    day = "1",
    doi = "10.1002/pssa.2210990150",
    language = "English",
    volume = "99",
    pages = "K49--K52",
    journal = "Physica Status Solidi (A) Applied Research",
    issn = "0031-8965",
    publisher = "Wiley-VCH Verlag",
    number = "1",

    }

    TY - JOUR

    T1 - Nickel‐related deep levels in silicon studied by combined hall effect and DLTS measurement

    AU - Kitagawa, H.

    AU - Nakashima, Hiroshi

    PY - 1987/1/1

    Y1 - 1987/1/1

    UR - http://www.scopus.com/inward/record.url?scp=0023061061&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0023061061&partnerID=8YFLogxK

    U2 - 10.1002/pssa.2210990150

    DO - 10.1002/pssa.2210990150

    M3 - Article

    AN - SCOPUS:0023061061

    VL - 99

    SP - K49-K52

    JO - Physica Status Solidi (A) Applied Research

    JF - Physica Status Solidi (A) Applied Research

    SN - 0031-8965

    IS - 1

    ER -