Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

A. B M Almamun Ashrafi, Ikuo Suemune, Hidekazu Kumano, Tanaka Satoru

Research output: Contribution to journalArticle

131 Citations (Scopus)

Abstract

Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (NA-ND) of ∼ 1014 cm-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the NA-ND up to ∼ 5 × 1016 cm-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number11 B
Publication statusPublished - Nov 15 2002
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Excitons
molecular beam epitaxy
Vapors
vapors
Nitrogen
nitrogen
Sapphire
conductivity
Photoluminescence
Electric properties
Doping (additives)
excitons
Annealing
Substrates
sapphire
electrical properties
photoluminescence
optimization
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy. / Ashrafi, A. B M Almamun; Suemune, Ikuo; Kumano, Hidekazu; Satoru, Tanaka.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 11 B, 15.11.2002.

Research output: Contribution to journalArticle

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