Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

A. B.M.Almamun Ashrafi, Ikuo Suemune, Hidekazu Kumano, Satoru Tanaka

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (NA-ND) of ∼ 1014 cm-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the NA-ND up to ∼ 5 × 1016 cm-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

Original languageEnglish
Pages (from-to)L1281-L1284
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number11 B
DOIs
Publication statusPublished - Nov 15 2002

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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