Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

A. B.M.Almamun Ashrafi; Ikuo Suemune; Hidekazu Kumano; Satoru Tanaka

doi:10.1143/jjap.41.l1281

Nitrogen-doped p-type ZnO layers prepared with H₂O vapor-assisted metalorganic molecular-beam epitaxy

A. B.M.Almamun Ashrafi, Ikuo Suemune, Hidekazu Kumano, Satoru Tanaka

Research output: Contribution to journal › Article › peer-review

135 Citations (Scopus)

Abstract

Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H₂O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (N_A-N_D) of ∼ 10¹⁴ cm^-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the N_A-N_D up to ∼ 5 × 10¹⁶ cm^-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

Original language	English
Pages (from-to)	L1281-L1284
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.41.l1281
Publication status	Published - Nov 15 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.l1281

Cite this

@article{1c677658e91d4308ad61ac81bc7efcd0,

title = "Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy",

abstract = "Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (NA-ND) of ∼ 1014 cm-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the NA-ND up to ∼ 5 × 1016 cm-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.",

author = "Ashrafi, {A. B.M.Almamun} and Ikuo Suemune and Hidekazu Kumano and Satoru Tanaka",

year = "2002",

month = nov,

day = "15",

doi = "10.1143/jjap.41.l1281",

language = "English",

volume = "41",

pages = "L1281--L1284",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "11 B",

}

TY - JOUR

T1 - Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

AU - Ashrafi, A. B.M.Almamun

AU - Suemune, Ikuo

AU - Kumano, Hidekazu

AU - Tanaka, Satoru

PY - 2002/11/15

Y1 - 2002/11/15

N2 - Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (NA-ND) of ∼ 1014 cm-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the NA-ND up to ∼ 5 × 1016 cm-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

AB - Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (NA-ND) of ∼ 1014 cm-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the NA-ND up to ∼ 5 × 1016 cm-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

UR - http://www.scopus.com/inward/record.url?scp=0037113685&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037113685&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.l1281

DO - 10.1143/jjap.41.l1281

M3 - Article

AN - SCOPUS:0037113685

SN - 0021-4922

VL - 41

SP - L1281-L1284

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 11 B

ER -

Nitrogen-doped p-type ZnO layers prepared with H₂O vapor-assisted metalorganic molecular-beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this